In this work, we report the growth, fabrication, and characterization of GeSn-on-Si Avalanche Photodiodes with a Sn concentration of up to 2.2%. The Ge1-xSnx absorption layer was grown at a very low temperature of 200°C by using molecular beam epitaxy. We show record low dark currents limited by a perimeter leakage path, only and therefore not influenced by the Sn concentration, while the absorption for a wavelength of 1,550 nm increases significantly.
%0 Conference Paper
%1 wanitzek2022gesnonsi
%A Wanitzek, Maurice
%A Oehme, Michael
%A Spieth, Christian
%A Schwarz, Daniel
%A Seidel, Lukas
%A Schulze, Jörg
%B ESSCIRC 2022- IEEE 48th European Solid State Circuits Conference (ESSCIRC)
%D 2022
%K iht professional_meetings
%P 169-172
%R 10.1109/ESSCIRC55480.2022.9911363
%T GeSn-on-Si Avalanche Photodiodes for Short-Wave Infrared Detection
%X In this work, we report the growth, fabrication, and characterization of GeSn-on-Si Avalanche Photodiodes with a Sn concentration of up to 2.2%. The Ge1-xSnx absorption layer was grown at a very low temperature of 200°C by using molecular beam epitaxy. We show record low dark currents limited by a perimeter leakage path, only and therefore not influenced by the Sn concentration, while the absorption for a wavelength of 1,550 nm increases significantly.
@inproceedings{wanitzek2022gesnonsi,
abstract = {In this work, we report the growth, fabrication, and characterization of GeSn-on-Si Avalanche Photodiodes with a Sn concentration of up to 2.2%. The Ge1-xSnx absorption layer was grown at a very low temperature of 200°C by using molecular beam epitaxy. We show record low dark currents limited by a perimeter leakage path, only and therefore not influenced by the Sn concentration, while the absorption for a wavelength of 1,550 nm increases significantly.},
added-at = {2023-01-12T10:59:04.000+0100},
author = {Wanitzek, Maurice and Oehme, Michael and Spieth, Christian and Schwarz, Daniel and Seidel, Lukas and Schulze, Jörg},
biburl = {https://puma.ub.uni-stuttgart.de/bibtex/2bae41d655870993d6a7ffbb8695e678c/ihtpublikation},
booktitle = {ESSCIRC 2022- IEEE 48th European Solid State Circuits Conference (ESSCIRC)},
description = {GeSn-on-Si Avalanche Photodiodes for Short-Wave Infrared Detection | IEEE Conference Publication | IEEE Xplore},
doi = {10.1109/ESSCIRC55480.2022.9911363},
interhash = {fd047b96e64231eded0e206fcda80928},
intrahash = {bae41d655870993d6a7ffbb8695e678c},
keywords = {iht professional_meetings},
month = {Sep.},
pages = {169-172},
timestamp = {2023-01-12T09:59:04.000+0100},
title = {GeSn-on-Si Avalanche Photodiodes for Short-Wave Infrared Detection},
year = 2022
}