%0 Conference Paper %1 dick2019electrical %A Dick, Jan Frederik %A Elsayed, Ahmed %A Schwarz, Daniel %A Schulze, Jörg %B 2019 42nd International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO) %D 2019 %E Koricic, Marko %I IEEE %K sent ubs_10005 ubs_20007 ubs_30069 ubs_40356 unibibliografie %P 19-23 %R 10.23919/MIPRO.2019.8756927 %T Electrical Characterization of Low-Temperature Boron on Silicon Deposition utilizing Molecular Beam Epitaxy %X Pure Boron on Silicon junctions are commonly deposited at temperatures ranging from Tsub = 400 °C to Tsub = 700 °C using Chemical Vapor Deposition. In this work, the low-temperature deposition of Boron on Silicon using Molecular Beam Epitaxy is investigated through electrical characterization, as well as an evaluation of the surface morphology. We also discuss how lower processing temperatures enable the employment of pure Boron deposition as a back end-of-line fabrication step where lower thermal budgets are required. %@ 978-953-233-098-4 and 978-1-5386-9296-7

@inproceedings{dick2019electrical, abstract = {Pure Boron on Silicon junctions are commonly deposited at temperatures ranging from Tsub = 400 °C to Tsub = 700 °C using Chemical Vapor Deposition. In this work, the low-temperature deposition of Boron on Silicon using Molecular Beam Epitaxy is investigated through electrical characterization, as well as an evaluation of the surface morphology. We also discuss how lower processing temperatures enable the employment of pure Boron deposition as a back end-of-line fabrication step where lower thermal budgets are required.}, added-at = {2019-12-23T11:58:16.000+0100}, author = {Dick, Jan Frederik and Elsayed, Ahmed and Schwarz, Daniel and Schulze, Jörg}, biburl = {https://puma.ub.uni-stuttgart.de/bibtex/27471cd75c14d666d0ae9f212b918672c/unibiblio}, booktitle = {2019 42nd International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO)}, doi = {10.23919/MIPRO.2019.8756927}, editor = {Koricic, Marko}, eventdate = {2019-05-20/2019-05-24}, eventtitle = {42nd International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO 2019)}, interhash = {fa311968ad14fc8fc3e767f23abb918f}, intrahash = {7471cd75c14d666d0ae9f212b918672c}, isbn = {{978-953-233-098-4} and {978-1-5386-9296-7}}, keywords = {sent ubs_10005 ubs_20007 ubs_30069 ubs_40356 unibibliografie}, language = {eng}, pages = {19-23}, publisher = {IEEE}, timestamp = {2020-10-13T09:23:12.000+0200}, title = {Electrical Characterization of Low-Temperature Boron on Silicon Deposition utilizing Molecular Beam Epitaxy}, venue = {Opatija, Croatia}, year = 2019 }