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Electrical Characterization of Low-Temperature Boron on Silicon Deposition utilizing Molecular Beam Epitaxy

, , , und . 2019 42nd International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO), Seite 19-23. (Mai 2019)

Zusammenfassung

Pure Boron on Silicon junctions are commonly deposited at temperatures ranging from Tsub = 400 °C to Tsub = 700 °C using Chemical Vapor Deposition. In this work, the low-temperature deposition of Boron on Silicon using Molecular Beam Epitaxy is investigated through electrical characterization, as well as an evaluation of the surface morphology. We also discuss how lower processing temperatures enable the employment of pure Boron deposition as a back end-of-line fabrication step where lower thermal budgets are required.

Links und Ressourcen

DOI:
10.23919/MIPRO.2019.8756927
URL:
BibTeX-Schlüssel:
8756927
Suchen auf:

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