This paper presents a method for junction temperature monitoring of SiC-MOSFETs based on a high-frequency gate-signal injection. The signal is injected during steady state (e.g. off-state) resulting in a current response, which depends on the temperature dependent gate impedance. The external gate resistor is used as a current shunt to capture the current response. The resulting signal contains the junction temperature information due to the temperature dependency of the gate impedance. This paper focuses on a sinusoidal approach to overcome the challenges due to the temperature dependent parasitic capacitance of the gate circuit. Measurements show the proof of concept, however, there are still challenges to face.
%0 Conference Paper
%1 9907316
%A Hirning, David
%A Bauer, Luca
%A Ruthardt, Johannes
%A Haarer, Jörg
%A Ziegler, Philipp
%A Roth-Stielow, Jörg
%B 2022 24th European Conference on Power Electronics and Applications (EPE'22 ECCE Europe)
%D 2022
%E IEEE,
%K ecce epe haarer hirning ilea roth-stielow ruthardt ziegler
%P 1-9
%T Online Junction Temperature Measurement of SiC-MOSFETs via Gate Impedance Using the Gate-Signal Injection Method
%U https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=9907316
%X This paper presents a method for junction temperature monitoring of SiC-MOSFETs based on a high-frequency gate-signal injection. The signal is injected during steady state (e.g. off-state) resulting in a current response, which depends on the temperature dependent gate impedance. The external gate resistor is used as a current shunt to capture the current response. The resulting signal contains the junction temperature information due to the temperature dependency of the gate impedance. This paper focuses on a sinusoidal approach to overcome the challenges due to the temperature dependent parasitic capacitance of the gate circuit. Measurements show the proof of concept, however, there are still challenges to face.
%@ 978-9-0758-1539-9
@inproceedings{9907316,
abstract = {This paper presents a method for junction temperature monitoring of SiC-MOSFETs based on a high-frequency gate-signal injection. The signal is injected during steady state (e.g. off-state) resulting in a current response, which depends on the temperature dependent gate impedance. The external gate resistor is used as a current shunt to capture the current response. The resulting signal contains the junction temperature information due to the temperature dependency of the gate impedance. This paper focuses on a sinusoidal approach to overcome the challenges due to the temperature dependent parasitic capacitance of the gate circuit. Measurements show the proof of concept, however, there are still challenges to face.},
added-at = {2022-11-30T08:39:44.000+0100},
author = {Hirning, David and Bauer, Luca and Ruthardt, Johannes and Haarer, Jörg and Ziegler, Philipp and Roth-Stielow, Jörg},
biburl = {https://puma.ub.uni-stuttgart.de/bibtex/2288932c5b682a456852f51e57064fda8/ilea},
booktitle = {2022 24th European Conference on Power Electronics and Applications (EPE'22 ECCE Europe)},
editor = {IEEE},
interhash = {3028b866af458cacf46f01933b925af5},
intrahash = {288932c5b682a456852f51e57064fda8},
isbn = {978-9-0758-1539-9},
keywords = {ecce epe haarer hirning ilea roth-stielow ruthardt ziegler},
month = {Sep.},
pages = {1-9},
timestamp = {2022-11-30T07:50:34.000+0100},
title = {Online Junction Temperature Measurement of SiC-MOSFETs via Gate Impedance Using the Gate-Signal Injection Method},
url = {https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=9907316},
year = 2022
}