Pure Boron on Germanium deposition was successfully performed using Molecular Beam Epitaxy to form ultra-shallow pin diodes. In order to form the pure Boron on Germanium heterojunction, a 100 nm thick highly Antimony doped Germanium layer was grown on a highly Arsenic doped Silicon(001) wafer by using Molecular Beam Epitaxy. Afterwards, a 5 min annealing step at 830 °C is performed to form a virtual, defect-less Germanium substrate. Growth is then continued with 300 nm of intrinsic Germanium layer. Finally, a few nanometers of Boron were deposited at a temperature of 400 °C. A maximum Boron deposition temperature of 400 °C allows the transfer of this technology to a Back End-of-Line process. A Complementary Metal-Oxide-Semiconductor-compatible fabrication process was utilized afterwards to fabricate single mesa diodes out of the grown layer stacks. The diodes show high ideality, low series resistance and low dark currents.
%0 Conference Paper
%1 gebert2019electrical
%A Gebert, Lukas
%A Schwarz, Daniel
%A Elsayed, Ahmed
%A Schulze, Jörg
%B 2019 42nd International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO)
%D 2019
%E Koricic, Marko
%I IEEE
%K sent ubs_10005 ubs_20007 ubs_30069 ubs_40356 unibibliografie
%P 13-18
%R 10.23919/MIPRO.2019.8757123
%T Electrical Characterization of pure Boron-on-Germanium pin Diodes
%X Pure Boron on Germanium deposition was successfully performed using Molecular Beam Epitaxy to form ultra-shallow pin diodes. In order to form the pure Boron on Germanium heterojunction, a 100 nm thick highly Antimony doped Germanium layer was grown on a highly Arsenic doped Silicon(001) wafer by using Molecular Beam Epitaxy. Afterwards, a 5 min annealing step at 830 °C is performed to form a virtual, defect-less Germanium substrate. Growth is then continued with 300 nm of intrinsic Germanium layer. Finally, a few nanometers of Boron were deposited at a temperature of 400 °C. A maximum Boron deposition temperature of 400 °C allows the transfer of this technology to a Back End-of-Line process. A Complementary Metal-Oxide-Semiconductor-compatible fabrication process was utilized afterwards to fabricate single mesa diodes out of the grown layer stacks. The diodes show high ideality, low series resistance and low dark currents.
%@ 978-953-233-098-4 and 978-1-5386-9296-7
@inproceedings{gebert2019electrical,
abstract = {Pure Boron on Germanium deposition was successfully performed using Molecular Beam Epitaxy to form ultra-shallow pin diodes. In order to form the pure Boron on Germanium heterojunction, a 100 nm thick highly Antimony doped Germanium layer was grown on a highly Arsenic doped Silicon(001) wafer by using Molecular Beam Epitaxy. Afterwards, a 5 min annealing step at 830 °C is performed to form a virtual, defect-less Germanium substrate. Growth is then continued with 300 nm of intrinsic Germanium layer. Finally, a few nanometers of Boron were deposited at a temperature of 400 °C. A maximum Boron deposition temperature of 400 °C allows the transfer of this technology to a Back End-of-Line process. A Complementary Metal-Oxide-Semiconductor-compatible fabrication process was utilized afterwards to fabricate single mesa diodes out of the grown layer stacks. The diodes show high ideality, low series resistance and low dark currents.},
added-at = {2019-12-23T11:59:35.000+0100},
author = {Gebert, Lukas and Schwarz, Daniel and Elsayed, Ahmed and Schulze, Jörg},
biburl = {https://puma.ub.uni-stuttgart.de/bibtex/2033f99945189eaccdca56b4f2443bdab/unibiblio},
booktitle = {2019 42nd International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO)},
doi = {10.23919/MIPRO.2019.8757123},
editor = {Koricic, Marko},
eventdate = {2019-05-20/2019-05-24},
eventtitle = {42nd International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO 2019)},
interhash = {fd2a648e34261f50ce10e69c90b76045},
intrahash = {033f99945189eaccdca56b4f2443bdab},
isbn = {{978-953-233-098-4} and {978-1-5386-9296-7}},
keywords = {sent ubs_10005 ubs_20007 ubs_30069 ubs_40356 unibibliografie},
language = {eng},
pages = {13-18},
publisher = {IEEE},
timestamp = {2020-10-13T09:21:34.000+0200},
title = {Electrical Characterization of pure Boron-on-Germanium pin Diodes},
venue = {Opatija, Croatia},
year = 2019
}
