Please log in to take part in the discussion (add own reviews or comments).
Cite this publication
More citation styles
- please select -
%0 Journal Article
%1 journals/tcas/DoNYK12
%A Do, Anh-Tuan
%A Nguyen, Truc Quynh
%A Yeo, Kiat Seng
%A Kim, Tony Tae-Hyoung
%D 2012
%J IEEE Trans. on Circuits and Systems
%K dblp
%N 12
%P 868-872
%T Sensing Margin Enhancement Techniques for Ultra-Low-Voltage SRAMs Utilizing a Bitline-Boosting Current and Equalized Bitline Leakage.
%U http://dblp.uni-trier.de/db/journals/tcas/tcasII59.html#DoNYK12
%V 59-II
@article{journals/tcas/DoNYK12,
added-at = {2013-02-13T00:00:00.000+0100},
author = {Do, Anh-Tuan and Nguyen, Truc Quynh and Yeo, Kiat Seng and Kim, Tony Tae-Hyoung},
biburl = {https://puma.ub.uni-stuttgart.de/bibtex/2963fb27a4571f180faa0a89d413cfe8e/dblp},
ee = {http://dx.doi.org/10.1109/TCSII.2012.2231014},
interhash = {e5078e8031ca64ab997ef76a3be6aa98},
intrahash = {963fb27a4571f180faa0a89d413cfe8e},
journal = {IEEE Trans. on Circuits and Systems},
keywords = {dblp},
number = 12,
pages = {868-872},
timestamp = {2016-02-02T02:20:04.000+0100},
title = {Sensing Margin Enhancement Techniques for Ultra-Low-Voltage SRAMs Utilizing a Bitline-Boosting Current and Equalized Bitline Leakage.},
url = {http://dblp.uni-trier.de/db/journals/tcas/tcasII59.html#DoNYK12},
volume = {59-II},
year = 2012
}
