In many power electronic applications, it is important to monitor the junction temperature of the power semiconductor devices. This enables for example an abnormal temperature protection, lifetime monitoring or junction temperature control. This paper proposes an online junction temperature measurement based on the internal gate resistance as a temperature sensitive electrical parameter. A direct measurement of this resistance is not possible. Therefore, a high frequency signal is injected into the gate circuit to measure the gate circuit's impedance, which includes the temperature sensitive internal gate resistance. This paper focuses on a simple realization of this method.
%0 Conference Paper
%1 8767601
%A Ruthardt, Johannes
%A Muñoz Barón, Kevin
%A Marx, Philipp
%A Sharma, Kanuj
%A Nitzsche, Maximilian
%A Fischer, Manuel
%A Roth-Stielow, Jörg
%B PCIM Europe 2019; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
%D 2019
%I VDE Verlag
%K myown
%P 1-7
%T Online Junction Temperature Measurement via Internal Gate Resistance Using the High Frequency Gate Signal Injection Method
%X In many power electronic applications, it is important to monitor the junction temperature of the power semiconductor devices. This enables for example an abnormal temperature protection, lifetime monitoring or junction temperature control. This paper proposes an online junction temperature measurement based on the internal gate resistance as a temperature sensitive electrical parameter. A direct measurement of this resistance is not possible. Therefore, a high frequency signal is injected into the gate circuit to measure the gate circuit's impedance, which includes the temperature sensitive internal gate resistance. This paper focuses on a simple realization of this method.
%@ 978-3-8007-4938-6
@inproceedings{8767601,
abstract = {In many power electronic applications, it is important to monitor the junction temperature of the power semiconductor devices. This enables for example an abnormal temperature protection, lifetime monitoring or junction temperature control. This paper proposes an online junction temperature measurement based on the internal gate resistance as a temperature sensitive electrical parameter. A direct measurement of this resistance is not possible. Therefore, a high frequency signal is injected into the gate circuit to measure the gate circuit's impedance, which includes the temperature sensitive internal gate resistance. This paper focuses on a simple realization of this method.},
added-at = {2021-10-18T13:16:46.000+0200},
author = {Ruthardt, Johannes and Muñoz Barón, Kevin and Marx, Philipp and Sharma, Kanuj and Nitzsche, Maximilian and Fischer, Manuel and Roth-Stielow, Jörg},
biburl = {https://puma.ub.uni-stuttgart.de/bibtex/20bf6f46dd9759280d98c921820b430d0/kevinmunozbaron},
booktitle = {PCIM Europe 2019; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management},
eventdate = {7. - 9. Mai 2019},
interhash = {c3d869587fbf6d6903b600183e4ce71c},
intrahash = {0bf6f46dd9759280d98c921820b430d0},
isbn = {978-3-8007-4938-6},
keywords = {myown},
language = {English},
month = may,
pages = {1-7},
publisher = {VDE Verlag},
timestamp = {2021-10-18T11:16:46.000+0200},
title = {Online Junction Temperature Measurement via Internal Gate Resistance Using the High Frequency Gate Signal Injection Method},
year = 2019
}