%0 Journal Article %1 Kallfass:15 %A Kallfass, I. %A Pahl, P. %A Massler, H. %A Leuther, A. %A Tessmann, A. %A Koch, S. %A Zwick, T. %D 2009 %J Microwave and Wireless Components Letters, IEEE %K 100 186 212 GHz GHz, HEMT amplifier, amplifiers amplifierscommunication electron frequency high high-resolution imaging integrated metamorphic millimeter-wave millimetre mobility monolithic nm,MMIC power radar, size systems, technology, to transistor transistors, wave %N 6 %P 410--412 %R 10.1109/LMWC.2009.2020042 %T A 200 GHz Monolithic Integrated Power Amplifier in Metamorphic HEMT Technology %V 19 %X A millimeter-wave monolithic integrated circuit power amplifier operating in the frequency range between 186 and 212 GHz is presented. The amplifier, dedicated to high-resolution imaging radar and communication systems, is realized in a 100 nm gate length metamorphic high electron mobility transistor technology. The three-stage design with four parallel transistors in the output stage achieves a linear gain of more than 12 dB and provides a saturated output power of more than 9 dBm and 7 dBm at 192 and 200 GHz, respectively.

@article{Kallfass:15, abstract = {A millimeter-wave monolithic integrated circuit power amplifier operating in the frequency range between 186 and 212 GHz is presented. The amplifier, dedicated to high-resolution imaging radar and communication systems, is realized in a 100 nm gate length metamorphic high electron mobility transistor technology. The three-stage design with four parallel transistors in the output stage achieves a linear gain of more than 12 dB and provides a saturated output power of more than 9 dBm and 7 dBm at 192 and 200 GHz, respectively.}, added-at = {2020-09-07T14:26:58.000+0200}, author = {Kallfass, I. and Pahl, P. and Massler, H. and Leuther, A. and Tessmann, A. and Koch, S. and Zwick, T.}, bdsk-url-1 = {https://doi.org/10.1109/LMWC.2009.2020042}, biburl = {https://puma.ub.uni-stuttgart.de/bibtex/2b6a6b1233ee62d99697e3b7510e478f3/ingmarkallfass}, doi = {10.1109/LMWC.2009.2020042}, interhash = {6ca3f4fe0fe98367eea9c4d24f3da7ab}, intrahash = {b6a6b1233ee62d99697e3b7510e478f3}, issn = {1531-1309}, journal = {Microwave and Wireless Components Letters, IEEE}, keywords = {100 186 212 GHz GHz, HEMT amplifier, amplifiers amplifierscommunication electron frequency high high-resolution imaging integrated metamorphic millimeter-wave millimetre mobility monolithic nm,MMIC power radar, size systems, technology, to transistor transistors, wave}, month = jun, number = 6, pages = {410--412}, timestamp = {2025-05-26T10:46:15.000+0200}, title = {{A 200 GHz Monolithic Integrated Power Amplifier in Metamorphic HEMT Technology}}, volume = 19, year = 2009 }