%0 Journal Article %1 journals/mr/LeeYJCP12 %A Lee, Seung Min %A Yu, Chong-Gun %A Jeong, Seung Min %A Cho, Won-Ju %A Park, Jong-Tae %D 2012 %J Microelectronics Reliability %K dblp %N 9-10 %P 1945-1948 %T Drain breakdown voltage: A comparison between junctionless and inversion mode p-channel MOSFETs. %U http://dblp.uni-trier.de/db/journals/mr/mr52.html#LeeYJCP12 %V 52

@article{journals/mr/LeeYJCP12, added-at = {2012-10-17T00:00:00.000+0200}, author = {Lee, Seung Min and Yu, Chong-Gun and Jeong, Seung Min and Cho, Won-Ju and Park, Jong-Tae}, biburl = {https://puma.ub.uni-stuttgart.de/bibtex/2d71efafa1328a841ac9024ecf20330c8/dblp}, ee = {http://dx.doi.org/10.1016/j.microrel.2012.06.018}, interhash = {5a0b9d74d972402548459b819c154355}, intrahash = {d71efafa1328a841ac9024ecf20330c8}, journal = {Microelectronics Reliability}, keywords = {dblp}, number = {9-10}, pages = {1945-1948}, timestamp = {2016-02-02T02:01:22.000+0100}, title = {Drain breakdown voltage: A comparison between junctionless and inversion mode p-channel MOSFETs.}, url = {http://dblp.uni-trier.de/db/journals/mr/mr52.html#LeeYJCP12}, volume = 52, year = 2012 }