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%0 Conference Paper
%1 burghartz1988selective
%A Burghartz, Joachim N.
%A Ginsberg, Barry J.
%A Mader, Siegfried R.
%A Chen, Tze-Chiang
%A Harame, David L.
%B ESSDERC 88 : 18th European Solid State Device Research Conference, September 13 - 16, 1988, Montpellier (France)
%C Piscataway, New Jersey
%D 1988
%I IEEE
%K INES
%P C4-367-C4-370
%R 10.1051/jphyscol:1988476
%T Selective Epitaxy Base for Bipolar Transistors
%@ 2-86883-099-4
@inproceedings{burghartz1988selective,
added-at = {2019-04-16T10:21:35.000+0200},
address = {Piscataway, New Jersey},
author = {Burghartz, Joachim N. and Ginsberg, Barry J. and Mader, Siegfried R. and Chen, Tze-Chiang and Harame, David L.},
biburl = {https://puma.ub.uni-stuttgart.de/bibtex/27f0a2c8d171b458e7291abe69c3dd245/kevin.konnerth},
booktitle = {ESSDERC 88 : 18th European Solid State Device Research Conference, September 13 - 16, 1988, Montpellier (France) },
doi = {10.1051/jphyscol:1988476},
eventdate = {1988-09-13/1988-09-16},
eventtitle = {ESSDERC '88 : 18th European Solid State Device Research Conference},
interhash = {25ccd015022471f8d962026b7d377938},
intrahash = {7f0a2c8d171b458e7291abe69c3dd245},
isbn = {2-86883-099-4},
keywords = {INES},
pages = {C4-367-C4-370 },
publisher = {IEEE},
timestamp = {2019-04-16T08:31:33.000+0200},
title = {Selective Epitaxy Base for Bipolar Transistors},
venue = {Montpellier, France},
year = 1988
}