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Impact of slow and fast oxide traps on In0.53Ga0.47As device operation studied using CET maps.

, , , , , , and . IRPS, page 5. IEEE, (2018)

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RF ESD protection strategies - the design and performance trade-off challenges., , , , , , , , , and 5 other author(s). CICC, page 489-496. IEEE, (2005)A brief overview of gate oxide defect properties and their relation to MOSFET instabilities and device and circuit time-dependent variability., , , , , , , , , and 4 other author(s). Microelectronics Reliability, (2018)New Insights into the Imprint Effect in FE-HfO2 and its Recovery., , , , , , , , , and 3 other author(s). IRPS, page 1-7. IEEE, (2019)The defect-centric perspective of device and circuit reliability - From individual defects to circuits., , , , , , , , , and 5 other author(s). ESSDERC, page 218-225. IEEE, (2015)Extended Subspace Identification of Improper Linear Systems., , , and . DATE, page 454-459. IEEE Computer Society, (2004)Stochastic Modeling of Hot-Carrier Degradation in nFinFETs Considering the Impact of Random Traps and Random Dopants., , , , , , , , , and 1 other author(s). ESSDERC, page 262-265. IEEE, (2019)ESD protection diodes in optical interposer technology., , , , , , and . ICICDT, page 1-4. IEEE, (2015)Self-heating-aware CMOS reliability characterization using degradation maps., , , , , , , and . IRPS, page 2. IEEE, (2018)Impact of slow and fast oxide traps on In0.53Ga0.47As device operation studied using CET maps., , , , , , and . IRPS, page 5. IEEE, (2018)Gate-Stack Engineered NBTI Improvements in Highvoltage Logic-For-Memory High-ĸ/Metal Gate Devices., , , , , , , , , and 6 other author(s). IRPS, page 1-8. IEEE, (2019)