Cryogenic Low-Noise mHEMT-Based MMIC Amplifiers for 4 - 12 GHz Band. Microwave and Wireless Components Letters, IEEE, (21)11:613--615, 2011. [PUMA: 100 11.6 12 22 26 4 41 8.1 GHz GHz;gain InAlAs-InGaAs;MMIC K;III-V K;temperature MMIC amplifiers; amplifiers;aluminium amplifiers;coplanar amplifiers;cryogenic arsenide;high chips;amplifier circuit;power circuits;broadband compounds;cryogenic compounds;low dB;gain dB;metamorphic electron electronics;gallium high integrated low-noise mHEMT-based mW;power mW;size microwave mobility nm;temperature noise semiconductors;MMIC technology;cryogenic temperature;frequency to transistor;monolithic transistors;indium very]