Metamorphic HEMT MMICs and Modules Operating Between 300 and 500 GHz. Solid-State Circuits, IEEE Journal of, (46)10:2193--2202, 2011. [PUMA: 20 220 35 50 500 GCPW;GaAs;InAlAs-InGaAs;S-MMIC GHz GHz;grounded HEMT MMIC MMIC;cascode amplifier amplifiers;submillimetre arsenide;indium circuit circuit;class-B circuit;frequency circuits; circuits;III-V circuits;waveguide-to-microstrip communication compounds;coplanar compounds;submillimetre coplanar doubler frequency high-electron integrated mobility module;amplifier monolithic multipliers;gallium mum;submillimeter-wave nm;size semiconductors;aluminium sensors;size systems;metamorphic technology;metamorphic technology;monolithically to topology;grounded transistor transitions;HEMT transitions;next-generation wave waveguide waveguide;high-data-rate waveguides;frequency wireless]