A 50 mW 220 GHz power amplifier module. 2010 IEEE MTT-S International Microwave Symposium, 45-48, May 2010. [PUMA: 207 220 230 50 GHz GHz;Power GHz;frequency MMIC;coplanar Waveguide;Module amplifier amplifier;HEMT;Coplanar amplifier;eight-way amplifiers;Power amplifiers;power circuits;Bandwidth;Frequency;MMICs;Indium combiners;power combining;amplifier coplanar coupler;Dolph-Chebychev electron faults;MMIC;Power generation;Coplanar mW;frequency mobility module;solid-state on-chip phosphide;HEMTs;Circuit power state technology;HEMT to transformer;power transistors;power transistors;tandem waveguide waveguides;Solid waveguides;high]
Metamorphic HEMT MMICs and Modules Operating Between 300 and 500 GHz. Solid-State Circuits, IEEE Journal of, (46)10:2193--2202, 2011. [PUMA: 20 220 35 50 500 GCPW;GaAs;InAlAs-InGaAs;S-MMIC GHz GHz;grounded HEMT MMIC MMIC;cascode amplifier amplifiers;submillimetre arsenide;indium circuit circuit;class-B circuit;frequency circuits; circuits;III-V circuits;waveguide-to-microstrip communication compounds;coplanar compounds;submillimetre coplanar doubler frequency high-electron integrated mobility module;amplifier monolithic multipliers;gallium mum;submillimeter-wave nm;size semiconductors;aluminium sensors;size systems;metamorphic technology;metamorphic technology;monolithically to topology;grounded transistor transitions;HEMT transitions;next-generation wave waveguide waveguide;high-data-rate waveguides;frequency wireless]