Metamorphic HEMT MMICs and Modules Operating Between 300 and 500 GHz. Solid-State Circuits, IEEE Journal of, (46)10:2193--2202, 2011. [PUMA: 35 monolithic coplanar transitions;HEMT module;amplifier MMIC;cascode 220 transitions;next-generation 500 doubler circuits; to semiconductors;aluminium nm;size HEMT mobility circuit frequency GHz;grounded sensors;size wave GCPW;GaAs;InAlAs-InGaAs;S-MMIC arsenide;indium compounds;submillimetre 50 technology;monolithically waveguide communication high-electron waveguide;high-data-rate circuit;class-B circuits;waveguide-to-microstrip circuit;frequency GHz wireless amplifier circuits;III-V 20 transistor amplifiers;submillimetre systems;metamorphic topology;grounded waveguides;frequency integrated mum;submillimeter-wave compounds;coplanar technology;metamorphic MMIC multipliers;gallium]