(Si)GeSn plasmonics. 2017 IEEE Photonics Society Summer Topical Meeting Series (SUM), 15-16, Juli 2017. [PUMA: j.schulze.iht journal iht] URL
The Zener-Emitter: A novel superluminescent Ge optical waveguide-amplifier with 4.7 dB gain at 92 mA based on free-carrier modulation by direct Zener tunneling monolithically integrated on Si. 2016 IEEE International Electron Devices Meeting (IEDM), 22.5.1-22.5.4, Dezember 2016. [PUMA: j.schulze.iht journal iht professional_meetings] URL
S-parameter characterization and lumped-element modelling of millimeter-wave single-drift impact-ionization avalanche transit-time diode. JAPANESE JOURNAL OF APPLIED PHYSICS, (55)4, SIIOP PUBLISHING LTD, April 2016. [PUMA: j.schulze.iht journal iht] URL
Transient Phenomena in Sub-Bandgap Impact Ionization in Si n-i-p-i-n Diode. IEEE Transactions on Electron Devices, (65)8:3414-3420, August 2018. [PUMA: j.schulze.iht journal iht] URL
Local growth of graphene on Cu and Cu0.88Ni0.12 foil substrates. 2017 40th International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO), 31-36, Mai 2017. [PUMA: j.schulze.iht journal iht] URL
Device performance tuning of Ge gate-all-around tunneling field effect transistors by means of GeSn: Potential and challenges. 2017 40th International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO), 57-65, Mai 2017. [PUMA: j.schulze.iht journal iht] URL
Contact resistivities of antimony-doped n-type Ge 1− x Sn x. Semiconductor Science and Technology, (31)8:08LT01, 2016. [PUMA: j.schulze.iht journal iht] URL
Compositional dependence of the band-gap of Ge1−x−ySixSny alloys. Appl. Phys. Lett., (108)24:242104--, American Institute of Physics, Juni 2016. [PUMA: j.schulze.iht journal iht] URL
The effect of Ge precursor on the heteroepitaxy of Ge 1− x Sn x epilayers on a Si (001) substrate. Semiconductor Science and Technology, (33)3:034003, 2018. [PUMA: j.schulze.iht journal iht] URL
Ellipsometric characterization of doped Ge0.95Sn0.05 films in the infrared range for plasmonic applications. Opt. Lett., (41)18:4398--4400, OSA, September 2016. [PUMA: j.schulze.iht journal iht] URL
Performance of C6H8O7-treated and H- and Cl-passivated Ge-MOS-capacitances on Ge-virtual-substrate on Si(001). 2018 41st International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO), 0027-0031, Mai 2018. [PUMA: j.schulze.iht journal iht professional_meetings] URL
Ge and GeSn Light Emitters on Si. Gettering and Defect Engineering in Semiconductor Technology XVI, (242):353--360, Trans Tech Publications, Februar 2016. [PUMA: j.schulze.iht journal iht]
Analysis of EL Emitted by LEDs on Si Substrates Containing GeSn/Ge Multi Quantum Wells as Active Layers. Gettering and Defect Engineering in Semiconductor Technology XVI, (242):361--367, Trans Tech Publications, Februar 2016. [PUMA: j.schulze.iht journal iht]
Structure and composition of Silicon–Germanium–Tin microstructures obtained through Mask Projection assisted Pulsed Laser Induced Epitaxy. Microelectronic Engineering, (125):18--21, Elsevier BV, August 2014. [PUMA: j.schulze.iht journal iht] URL
Improved Off-Current and Modeling in Sub-430 °C Si p-i-n Selector for Unipolar Resistive Random Access Memory. IEEE Electron Device Letters, (36)12:1310-1313, Dezember 2015. [PUMA: j.schulze.iht journal iht] URL
GeSn Heterojunction LEDs on Si Substrates. IEEE Photonics Technology Letters, (26)2:187-189, Januar 2014. [PUMA: j.schulze.iht journal iht] URL
Effect of heavy doping and strain on the electroluminescence of Ge-on-Si light emitting diodes. Thin Solid Films, (557):351--354, Elsevier BV, April 2014. [PUMA: j.schulze.iht journal iht] URL
Room Temperature Direct Band Gap Emission from Ge p-i-n Heterojunction Photodiodes. Advances in OptoElectronics, (2012):4, 2012. [PUMA: j.schulze.iht journal iht] URL
Germanium-tin p-i-n photodetectors integrated on silicon grown by molecular beam epitaxy. Appl. Phys. Lett., (98)6:061108--, American Institute of Physics, Februar 2011. [PUMA: j.schulze.iht journal iht] URL
Germanium vertical Tunneling Field-Effect Transistor. Solid-State Electronics, (62)1:132--137, Elsevier BV, August 2011. [PUMA: j.schulze.iht journal iht] URL