Publications

I. A. Fischer, L. Augel, A. Berrier, M. Oehme, und J. Schulze. (Si)GeSn plasmonics. 2017 IEEE Photonics Society Summer Topical Meeting Series (SUM), 15-16, Juli 2017. [PUMA: j.schulze.iht journal iht] URL

R. Koerner, D. Schwaiz, I. A. Fischer, L. Augel, S. Bechler, L. Haenel, M. Kern, M. Oehme, E. Rolseth, B. Schwartz, D. Weisshaupt, W. Zhang, und J. Schulze. The Zener-Emitter: A novel superluminescent Ge optical waveguide-amplifier with 4.7 dB gain at 92 mA based on free-carrier modulation by direct Zener tunneling monolithically integrated on Si. 2016 IEEE International Electron Devices Meeting (IEDM), 22.5.1-22.5.4, Dezember 2016. [PUMA: j.schulze.iht journal iht professional_meetings] URL

Wogong Zhang, Yuji Yamamoto, Michael Oehme, Klaus-Dieter Matthies, Ashraful I. Raju, V. S. Senthil Srinivasan, Roman Körner, Martin Gollhofer, Stefan Bechler, Hannes Funk, Bernd Tillack, Erich Kasper, und Jörg Schulze. S-parameter characterization and lumped-element modelling of millimeter-wave single-drift impact-ionization avalanche transit-time diode. JAPANESE JOURNAL OF APPLIED PHYSICS, (55)4, SIIOP PUBLISHING LTD, April 2016. [PUMA: j.schulze.iht journal iht] URL

B. Das, J. Schulze, und U. Ganguly. Transient Phenomena in Sub-Bandgap Impact Ionization in Si n-i-p-i-n Diode. IEEE Transactions on Electron Devices, (65)8:3414-3420, August 2018. [PUMA: j.schulze.iht journal iht] URL

H. S. Funk, J. Ng, N. Kamimura, Y. . Xie, und J. Schulze. Local growth of graphene on Cu and Cu0.88Ni0.12 foil substrates. 2017 40th International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO), 31-36, Mai 2017. [PUMA: j.schulze.iht journal iht] URL

E. G. Rolseth, A. Blech, I. A. Fischer, Y. Hashad, R. Koerner, K. Kostecki, A. Kruglov, V. S. Senthil Srinivasan, M. Weiser, T. Wendav, K. Busch, und J. Schulze. Device performance tuning of Ge gate-all-around tunneling field effect transistors by means of GeSn: Potential and challenges. 2017 40th International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO), 57-65, Mai 2017. [PUMA: j.schulze.iht journal iht] URL

V S Senthil Srinivasan, Inga A Fischer, Lion Augel, Anja Hornung, Roman Koerner, Konrad Kostecki, Michael Oehme, Erlend Rolseth, und Joerg Schulze. Contact resistivities of antimony-doped n-type Ge 1− x Sn x. Semiconductor Science and Technology, (31)8:08LT01, 2016. [PUMA: j.schulze.iht journal iht] URL

Torsten Wendav, Inga A. Fischer, Michele Montanari, Marvin Hartwig Zoellner, Wolfgang Klesse, Giovanni Capellini, Nils von den Driesch, Michael Oehme, Dan Buca, Kurt Busch, und Jörg Schulze. Compositional dependence of the band-gap of Ge1−x−ySixSny alloys. Appl. Phys. Lett., (108)24:242104--, American Institute of Physics, Juni 2016. [PUMA: j.schulze.iht journal iht] URL

Pedram Jahandar, David Weisshaupt, Gerard Colston, Phil Allred, Jorg Schulze, und Maksym Myronov. The effect of Ge precursor on the heteroepitaxy of Ge 1− x Sn x epilayers on a Si (001) substrate. Semiconductor Science and Technology, (33)3:034003, 2018. [PUMA: j.schulze.iht journal iht] URL

L. Augel, I. A. Fischer, F. Hornung, M. Dressel, A. Berrier, M. Oehme, und J. Schulze. Ellipsometric characterization of doped Ge0.95Sn0.05 films in the infrared range for plasmonic applications. Opt. Lett., (41)18:4398--4400, OSA, September 2016. [PUMA: j.schulze.iht journal iht] URL

L. A. Hänel, Y. Elogail, D. Schwarz, I. A. Fischer, und J. Schulze. Performance of C6H8O7-treated and H- and Cl-passivated Ge-MOS-capacitances on Ge-virtual-substrate on Si(001). 2018 41st International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO), 0027-0031, Mai 2018. [PUMA: j.schulze.iht journal iht professional_meetings] URL

Michael Oehme, Martin Gollhofer, Konrad Kostecki, Roman Koerner, Stefan Bechler, Daniel Widmann, Tzanimir Arguirov, Martin Kittler, und Jörg Schulze. Ge and GeSn Light Emitters on Si. Gettering and Defect Engineering in Semiconductor Technology XVI, (242):353--360, Trans Tech Publications, Februar 2016. [PUMA: j.schulze.iht journal iht]

Bernhard Schwartz, Philipp Saring, Tzanimir Arguirov, Michael Oehme, Konrad Kostecki, Erich Kasper, Joerg Schulze, und Martin Kittler. Analysis of EL Emitted by LEDs on Si Substrates Containing GeSn/Ge Multi Quantum Wells as Active Layers. Gettering and Defect Engineering in Semiconductor Technology XVI, (242):361--367, Trans Tech Publications, Februar 2016. [PUMA: j.schulze.iht journal iht]

Stefan Stefanov, Carmen Serra, Alessandro Benedetti, Jorge Carlos Conde, Jens Werner, Michael Oehme, Jörg Schulze, Stephan Wirths, Dan Buca, und Stefano Chiussi. Structure and composition of Silicon–Germanium–Tin microstructures obtained through Mask Projection assisted Pulsed Laser Induced Epitaxy. Microelectronic Engineering, (125):18--21, Elsevier BV, August 2014. [PUMA: j.schulze.iht journal iht] URL

R. Mandapati, S. Shrivastava, S. Sushama, B. Saha, J. Schulze, und U. Ganguly. Improved Off-Current and Modeling in Sub-430 °C Si p-i-n Selector for Unipolar Resistive Random Access Memory. IEEE Electron Device Letters, (36)12:1310-1313, Dezember 2015. [PUMA: j.schulze.iht journal iht] URL

M. Oehme, K. Kostecki, T. Arguirov, G. Mussler, K. Ye, M. Gollhofer, M. Schmid, M. Kaschel, R. A. Körner, M. Kittler, D. Buca, E. Kasper, und J. Schulze. GeSn Heterojunction LEDs on Si Substrates. IEEE Photonics Technology Letters, (26)2:187-189, Januar 2014. [PUMA: j.schulze.iht journal iht] URL

Marc Schmid, Michael Oehme, Martin Gollhofer, Roman Körner, Mathias Kaschel, Erich Kasper, und Joerg Schulze. Effect of heavy doping and strain on the electroluminescence of Ge-on-Si light emitting diodes. Thin Solid Films, (557):351--354, Elsevier BV, April 2014. [PUMA: j.schulze.iht journal iht] URL

E. Kasper, M. Oehme, T. Arguirov, J. Werner, M. Kittler, und J. Schulze. Room Temperature Direct Band Gap Emission from Ge p-i-n Heterojunction Photodiodes. Advances in OptoElectronics, (2012):4, 2012. [PUMA: j.schulze.iht journal iht] URL

J Werner, M Oehme, M Schmid, M Kaschel, A Schirmer, E Kasper, und J Schulze. Germanium-tin p-i-n photodetectors integrated on silicon grown by molecular beam epitaxy. Appl. Phys. Lett., (98)6:061108--, American Institute of Physics, Februar 2011. [PUMA: j.schulze.iht journal iht] URL

D. Hähnel, M. Oehme, M. Sarlija, A. Karmous, M. Schmid, J. Werner, O. Kirfel, I. Fischer, und J. Schulze. Germanium vertical Tunneling Field-Effect Transistor. Solid-State Electronics, (62)1:132--137, Elsevier BV, August 2011. [PUMA: j.schulze.iht journal iht] URL