Power Amplification at 0.65 THz Using InP HEMTs. IEEE Transactions on Microwave Theory and Techniques, (60)3:724-729, März 2012. [PUMA: (SSPA);sub-millimeter (TMIC) 0.65 1.7 20 3 30 629 638 640 GHz GHz;frequency GHz;power THz;size Y-junction;combiner;splitter;power-combined amplification;solid-state amplifier amplifier;TMIC amplifier;electromagnetic amplifier;solid-state amplifiers;MMIC amplifiers;millimetre amplifiers;power circuit circuits;HEMT circuits;III-V combiners;power compounds;microwave coupled coupling;WR1.5 generation;Gain;Electromagnetic integrated mW;InP;Power mW;frequency measurement;MODFETs;Indium module;HEMT module;frequency monolithic mum;power nm;size package;waveguide phosphide;HEMT;millimeter power power-amplifier process;eight-stage semiconductors;indium terahertz to transistor;integrated transition;direct wave wave;power wave;terahertz waveguide;amplifier waveguides;Power]
Metamorphic HEMT MMICs and Modules Operating Between 300 and 500 GHz. Solid-State Circuits, IEEE Journal of, (46)10:2193--2202, 2011. [PUMA: 20 220 35 50 500 GCPW;GaAs;InAlAs-InGaAs;S-MMIC GHz GHz;grounded HEMT MMIC MMIC;cascode amplifier amplifiers;submillimetre arsenide;indium circuit circuit;class-B circuit;frequency circuits; circuits;III-V circuits;waveguide-to-microstrip communication compounds;coplanar compounds;submillimetre coplanar doubler frequency high-electron integrated mobility module;amplifier monolithic multipliers;gallium mum;submillimeter-wave nm;size semiconductors;aluminium sensors;size systems;metamorphic technology;metamorphic technology;monolithically to topology;grounded transistor transitions;HEMT transitions;next-generation wave waveguide waveguide;high-data-rate waveguides;frequency wireless]