%0 Journal Article %1 Weinert:22 %A Weinert, Pascal J. %A Grossmann, Marius %A Brauch, Uwe %A Jetter, Michael %A Michler, Peter %A Graf, Thomas %A Abdou Ahmed, Marwan %D 2022 %I OSA %J Opt. Lett. %K myown from:dr.uwebrauch semiconductor peer Laser Diodepumped thindisklaser %N 8 %P 1980--1983 %R 10.1364/OL.450697 %T High-power quasi-CW diode-pumped 750-nm AlGaAs VECSEL emitting a peak power of 29.6 W and an average power of 8.5 W %U http://opg.optica.org/ol/abstract.cfm?URI=ol-47-8-1980 %V 47 %X A peak output power of 29.6 W and an average output power of 8.5 W at a wavelength of 750 nm were demonstrated in quasi-CW multi-mode operation using an AlGaAs-based vertical external-cavity surface-emitting laser (VECSEL) diode-pumped at a wavelength of 675 nm. The comparatively low bandgap of the barrier material that was tuned to the pump-photon energy allowed a good compromise between low heat generation due to the quantum defect and strong absorptance of the pump radiation. The limitations for the average output power came mainly from insufficient heat flow from the intra-cavity heat spreader to the heat sink. These results show the potential for power scaling of diode-pumped VECSELs and the importance of effective heat removal.

@article{Weinert:22, abstract = {A peak output power of 29.6 W and an average output power of 8.5 W at a wavelength of 750 nm were demonstrated in quasi-CW multi-mode operation using an AlGaAs-based vertical external-cavity surface-emitting laser (VECSEL) diode-pumped at a wavelength of 675 nm. The comparatively low bandgap of the barrier material that was tuned to the pump-photon energy allowed a good compromise between low heat generation due to the quantum defect and strong absorptance of the pump radiation. The limitations for the average output power came mainly from insufficient heat flow from the intra-cavity heat spreader to the heat sink. These results show the potential for power scaling of diode-pumped VECSELs and the importance of effective heat removal.}, added-at = {2022-04-08T17:13:09.000+0200}, author = {Weinert, Pascal J. and Grossmann, Marius and Brauch, Uwe and Jetter, Michael and Michler, Peter and Graf, Thomas and Abdou Ahmed, Marwan}, biburl = {https://puma.ub.uni-stuttgart.de/bibtex/27b5f7871fad0b9b0bbe9a4b85c29868e/ifsw}, doi = {10.1364/OL.450697}, interhash = {f973cd79235baa720c43792dcb40404d}, intrahash = {7b5f7871fad0b9b0bbe9a4b85c29868e}, journal = {Opt. Lett.}, keywords = {myown from:dr.uwebrauch semiconductor peer Laser Diodepumped thindisklaser}, month = apr, number = 8, pages = {1980--1983}, publisher = {OSA}, timestamp = {2022-04-08T15:13:09.000+0200}, title = {High-power quasi-CW diode-pumped 750-nm AlGaAs VECSEL emitting a peak power of 29.6 W and an average power of 8.5 W}, url = {http://opg.optica.org/ol/abstract.cfm?URI=ol-47-8-1980}, volume = 47, year = 2022 }