%0 Journal Article %1 journals/mr/PoliakovBCHD11 %A Poliakov, Pavel %A Blomme, Pieter %A Corbalan, Miguel %A Houdt, Jan Van %A Dehaene, Wim %D 2011 %J Microelectronics Reliability %K dblp %N 5 %P 919-924 %T Cross-cell interference variability aware model of fully planar NAND Flash memory including line edge roughness. %U http://dblp.uni-trier.de/db/journals/mr/mr51.html#PoliakovBCHD11 %V 51

@article{journals/mr/PoliakovBCHD11, added-at = {2011-04-21T00:00:00.000+0200}, author = {Poliakov, Pavel and Blomme, Pieter and Corbalan, Miguel and Houdt, Jan Van and Dehaene, Wim}, biburl = {https://puma.ub.uni-stuttgart.de/bibtex/213ecf71d5035eb3c51f322a7a15c281d/dblp}, ee = {http://dx.doi.org/10.1016/j.microrel.2010.12.010}, interhash = {f93c201f78f841bf895c27efe365e064}, intrahash = {13ecf71d5035eb3c51f322a7a15c281d}, journal = {Microelectronics Reliability}, keywords = {dblp}, number = 5, pages = {919-924}, timestamp = {2016-02-02T02:02:25.000+0100}, title = {Cross-cell interference variability aware model of fully planar NAND Flash memory including line edge roughness.}, url = {http://dblp.uni-trier.de/db/journals/mr/mr51.html#PoliakovBCHD11}, volume = 51, year = 2011 }