Robust Approach for Characterization of Junction Temperature of SiC power devices via Quasi-Threshold Voltage as Temperature Sensitive Electrical Parameter
K. Sharma, and I. Kallfass. in Proc. Applied Power Electronics Conf. (APEC), New Orleans, (2020)
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%0 Journal Article
%1 Sharma_APEC2020
%A Sharma, K.
%A Kallfass, I.
%D 2020
%J in Proc. Applied Power Electronics Conf. (APEC), New Orleans
%K imported
%T Robust Approach for Characterization of Junction Temperature of SiC power devices via Quasi-Threshold Voltage as Temperature Sensitive Electrical Parameter
@article{Sharma_APEC2020,
added-at = {2020-09-07T14:26:58.000+0200},
author = {Sharma, K. and Kallfass, I.},
biburl = {https://puma.ub.uni-stuttgart.de/bibtex/2ce3f0188fe8bae8fc869661beb6b0c2a/ingmarkallfass},
interhash = {e389848dc4a3ff46c854321748879cb6},
intrahash = {ce3f0188fe8bae8fc869661beb6b0c2a},
journal = {in Proc. Applied Power Electronics Conf. (APEC), New Orleans},
keywords = {imported},
timestamp = {2020-09-07T12:28:02.000+0200},
title = {{Robust Approach for Characterization of Junction Temperature of SiC power devices via Quasi-Threshold Voltage as Temperature Sensitive Electrical Parameter}},
year = 2020
}
