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%0 Conference Paper
%1 conf/essderc/ChangCJHZPZHSYZ18
%A Chang, Mingcheng
%A Chan, Nigel
%A Joshi, Vivek
%A Hecker, Sandra
%A Ziller, Udo
%A Poth, Petra
%A Zaka, Alban
%A Herrmann, Tom
%A Seo, Seunghwan
%A Yoon, Hongsik
%A Zou, Xin
%A Xu, Zhen
%A Ramamurthy, Hema
%A Klick, Torsten
%A Congedo, Gabriele
%A Lee, Youmean
%A Erben, Elke
%A Zschaetzsch, Gerd
%A Faul, Juergen
%A Kluth, Jon
%A Schmid, Joerg
%A Bentum, Ralf Van
%A Weintraub, Chad
%B ESSDERC
%D 2018
%I IEEE
%K dblp
%P 78-81
%T Novel Back Gate Doping Ultra Low Retention Power 22nm FDSOl SRAM for IOT Application.
%U http://dblp.uni-trier.de/db/conf/essderc/essderc2018.html#ChangCJHZPZHSYZ18
%@ 978-1-5386-5401-9
@inproceedings{conf/essderc/ChangCJHZPZHSYZ18,
added-at = {2018-11-13T00:00:00.000+0100},
author = {Chang, Mingcheng and Chan, Nigel and Joshi, Vivek and Hecker, Sandra and Ziller, Udo and Poth, Petra and Zaka, Alban and Herrmann, Tom and Seo, Seunghwan and Yoon, Hongsik and Zou, Xin and Xu, Zhen and Ramamurthy, Hema and Klick, Torsten and Congedo, Gabriele and Lee, Youmean and Erben, Elke and Zschaetzsch, Gerd and Faul, Juergen and Kluth, Jon and Schmid, Joerg and Bentum, Ralf Van and Weintraub, Chad},
biburl = {https://puma.ub.uni-stuttgart.de/bibtex/2ea657b83ebea74355b3d602b437dbdfb/dblp},
booktitle = {ESSDERC},
crossref = {conf/essderc/2018},
ee = {https://doi.org/10.1109/ESSDERC.2018.8486897},
interhash = {dfec43b11781bc1e251418dfdf80923f},
intrahash = {ea657b83ebea74355b3d602b437dbdfb},
isbn = {978-1-5386-5401-9},
keywords = {dblp},
pages = {78-81},
publisher = {IEEE},
timestamp = {2019-09-27T12:42:05.000+0200},
title = {Novel Back Gate Doping Ultra Low Retention Power 22nm FDSOl SRAM for IOT Application.},
url = {http://dblp.uni-trier.de/db/conf/essderc/essderc2018.html#ChangCJHZPZHSYZ18},
year = 2018
}
