%0 Journal Article %1 fregonese2007modeling %A Fregonese, Sébastien %A Zhuang, Yan %A Burghartz, Joachim N. %C Piscataway, New Jersey %D 2007 %I IEEE %J IEEE Transactions on Electron Devices %K INES %N 9 %P 2321-2326 %R 10.1109/TED.2007.902719 %T Modeling of Strained CMOS on Disposable SiGe Dots: Strain Impacts on Devices' Electrical Characteristics %V 54

@article{fregonese2007modeling, added-at = {2019-03-19T15:38:50.000+0100}, address = {Piscataway, New Jersey}, author = {Fregonese, Sébastien and Zhuang, Yan and Burghartz, Joachim N.}, biburl = {https://puma.ub.uni-stuttgart.de/bibtex/26cea266e6930524b1a9a874cc9a07148/kevin.konnerth}, doi = {10.1109/TED.2007.902719}, interhash = {cdd8e35cc88b8c9d7770f320d0af5fc4}, intrahash = {6cea266e6930524b1a9a874cc9a07148}, issn = {{0018-9383} and {1557-9646}}, journal = {IEEE Transactions on Electron Devices}, keywords = {INES}, number = 9, pages = {2321-2326}, publisher = {IEEE}, timestamp = {2019-03-19T14:51:25.000+0100}, title = {Modeling of Strained CMOS on Disposable SiGe Dots: Strain Impacts on Devices' Electrical Characteristics}, volume = 54, year = 2007 }