%0 Conference Paper %1 Radisic_IMS2010 %A Radisic, V. %A Leong, K. M. K. H. %A Mei, X. %A Sarkozy, S. %A Yoshida, W. %A Liu, P. %A Uyeda, J. %A Lai, R. %A Deal, W. R. %B 2010 IEEE MTT-S International Microwave Symposium %D 2010 %K 207 220 230 50 GHz GHz;Power GHz;frequency MMIC;coplanar Waveguide;Module amplifier amplifier;HEMT;Coplanar amplifier;eight-way amplifiers;Power amplifiers;power circuits;Bandwidth;Frequency;MMICs;Indium combiners;power combining;amplifier coplanar coupler;Dolph-Chebychev electron faults;MMIC;Power generation;Coplanar mW;frequency mobility module;solid-state on-chip phosphide;HEMTs;Circuit power state technology;HEMT to transformer;power transistors;power transistors;tandem waveguide waveguides;Solid waveguides;high %P 45-48 %R 10.1109/MWSYM.2010.5515248 %T A 50 mW 220 GHz power amplifier module %X In this paper, a 220 GHz solid-state power amplifier (SSPA) module is presented. Eight-way on-chip power combining is used to achieve a saturated output power ≥ 50 mW over a 217.5 to 220 GHz bandwidth, representing a significant increase in SSPA output power at this frequency compared to prior state of the art. The amplifier MMIC is implemented in coplanar waveguide (CPW) technology and uses sub 50 nm InP HEMT transistors. Two levels of power combining, a 2:1 tandem coupler and a 4:1 Dolph-Chebychev transformer, are realized in CPW. The module demonstrates ≥ 11.5 dB small signal gain from 207 to 230 GHz. Saturated output power ≥ 40 mW was measured from 216 to 222.5 GHz.

@inproceedings{Radisic_IMS2010, abstract = {In this paper, a 220 GHz solid-state power amplifier (SSPA) module is presented. Eight-way on-chip power combining is used to achieve a saturated output power ≥ 50 mW over a 217.5 to 220 GHz bandwidth, representing a significant increase in SSPA output power at this frequency compared to prior state of the art. The amplifier MMIC is implemented in coplanar waveguide (CPW) technology and uses sub 50 nm InP HEMT transistors. Two levels of power combining, a 2:1 tandem coupler and a 4:1 Dolph-Chebychev transformer, are realized in CPW. The module demonstrates ≥ 11.5 dB small signal gain from 207 to 230 GHz. Saturated output power ≥ 40 mW was measured from 216 to 222.5 GHz.}, added-at = {2022-11-04T11:48:46.000+0100}, author = {{Radisic}, V. and {Leong}, K. M. K. H. and {Mei}, X. and {Sarkozy}, S. and {Yoshida}, W. and {Liu}, P. and {Uyeda}, J. and {Lai}, R. and {Deal}, W. R.}, bdsk-url-1 = {https://doi.org/10.1109/MWSYM.2010.5515248}, biburl = {https://puma.ub.uni-stuttgart.de/bibtex/20e59c7a6aa6ee1ceb12b34236204896c/ingmarkallfass}, booktitle = {2010 IEEE MTT-S International Microwave Symposium}, date-added = {2020-11-24 14:40:21 +0100}, date-modified = {2020-11-24 14:40:29 +0100}, doi = {10.1109/MWSYM.2010.5515248}, interhash = {77a774c4398f74d47c7804afbf41172e}, intrahash = {0e59c7a6aa6ee1ceb12b34236204896c}, issn = {0149-645X}, keywords = {207 220 230 50 GHz GHz;Power GHz;frequency MMIC;coplanar Waveguide;Module amplifier amplifier;HEMT;Coplanar amplifier;eight-way amplifiers;Power amplifiers;power circuits;Bandwidth;Frequency;MMICs;Indium combiners;power combining;amplifier coplanar coupler;Dolph-Chebychev electron faults;MMIC;Power generation;Coplanar mW;frequency mobility module;solid-state on-chip phosphide;HEMTs;Circuit power state technology;HEMT to transformer;power transistors;power transistors;tandem waveguide waveguides;Solid waveguides;high}, month = May, pages = {45-48}, timestamp = {2022-11-04T10:48:46.000+0100}, title = {A 50 mW 220 GHz power amplifier module}, year = 2010 }