Inproceedings,

A 1.92-GS/s CT ΔΣ modulator with 70-db DR and 78-db SFDR in 15-MHz bandwidth

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2014 IEEE 12th International New Circuits and Systems Conference (NEWCAS), page 480-483. (June 2014)
DOI: 10.1109/NEWCAS.2014.6934087

Abstract

This paper describes the implementation and measurement results of a 1.92 GS/s continuous-time (CT) low-pass ΔΣmodulator for a high frequency (>10 GHz) multifunctional receiver. The proposed single-loop 3rd-order modulator operates at 1.92 GHz, taking advantage of the high transit frequency (fT) of a low-cost 0.25 μm SiGe BiCMOS process. In order to achieve high linearity, single-bit quantization is employed, which is inherently linear and no digital DAC linearity enhancement technique is required. The experimental prototype chip achieves a dynamic range of 70 dB and a spurious-free dynamic range (SFDR) of 78.1 dB for a signal bandwidth of 15 MHz. It dissipates 220 mW and occupies 0.4 mm2 silicon area.

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