Abstract
Semiconductor disk lasers with all their advantages1 became an important stand-alone class of solid-state lasers
during the last years. However, these systems su
er from heat incorporation into the active region caused by
the excess energy of the pump photons. To overcome this limitation we realized the semiconductor membrane
external-cavity surface-emitting laser as a diamond heat spreader sandwiched active region design. A detailed
process description towards the MECSEL2 approach is given as well as fundamental performance values. Furthermore,
parasitic lateral lasing e
ects are discovered and investigated. Nevertheless, the MECSEL approach
indicates enormous potential to revolutionize the semiconductor based disk lasers regarding available output
powers at room temperature and material combinations.
Users
Please
log in to take part in the discussion (add own reviews or comments).