%0 Journal Article %1 patton1990fsubt %A Patton, Gary L. %A Comfort, James H. %A Meyerson, Bernard S. %A Crabbé, E. F. %A Scilla, G. J. %A de Fresart, E. %A Stork, Johannes M. C. %A Sun, Jack Yuan-Chen %A Harame, David L. %A Burghartz, Joachim N. %C Piscataway, New Jersey %D 1990 %I IEEE %J IEEE Electron Device Letters %K INES firstnamemissing %N 4 %P 171-173 %R 10.1109/55.61782 %T 75 GHz F-Sub-T SiGe-Base Heterojunction Bipolar Transistors %V 11

@article{patton1990fsubt, added-at = {2019-04-12T12:33:21.000+0200}, address = {Piscataway, New Jersey}, author = {Patton, Gary L. and Comfort, James H. and Meyerson, Bernard S. and Crabbé, E. F. and Scilla, G. J. and de Fresart, E. and Stork, Johannes M. C. and Sun, Jack Yuan-Chen and Harame, David L. and Burghartz, Joachim N.}, biburl = {https://puma.ub.uni-stuttgart.de/bibtex/2955bb0e724e10a677e2bd37606b75ba3/kevin.konnerth}, doi = {10.1109/55.61782}, interhash = {329aa41df2f3e2d9eb28f6012ada1e10}, intrahash = {955bb0e724e10a677e2bd37606b75ba3}, issn = {{0741-3106} and {1558-0563}}, journal = {IEEE Electron Device Letters}, keywords = {INES firstnamemissing}, month = apr, number = 4, pages = {171-173}, publisher = {IEEE}, timestamp = {2019-04-12T10:34:18.000+0200}, title = {75 GHz F-Sub-T SiGe-Base Heterojunction Bipolar Transistors}, volume = 11, year = 1990 }