We present experimental results of Ge-on-Si single-photon avalanche diodes based on a novel, to our knowledge, double mesa structure. Using this structure, the electric field at the mesa edges is suppressed compared to a traditional single mesa, leading to significant performance improvements. The dark current in linear mode shows a smaller increase for larger reverse voltages, resulting in a reduction by more than 260 times at low temperatures. Operated in the Geiger-mode at 110 K, the dark count rate in the double mesa is 100 times smaller. The devices achieve a dark count rate of 953 kHz, a single-photon detection efficiency of 7.3\%, and a record-low jitter of 81 ps at an excess bias of 17.6\% and a temperature of 110 K.
%0 Journal Article
%1 wanitzek2024geonsi
%A Wanitzek, Maurice
%A Schulze, Jörg
%A Oehme, Michael
%D 2024
%I Optica Publishing Group
%J Opt. Lett.
%K Absorption Chemical Germanium; Quantum Scanning Single-photon avalanche coefficient; deposition; diodes distribution; electron iht; journal key microscopy; vapor;
%N 22
%P 6345--6348
%R 10.1364/OL.534436
%T Ge-on-Si single-photon avalanche diode using a double mesa structure
%U https://opg.optica.org/ol/abstract.cfm?URI=ol-49-22-6345
%V 49
%X We present experimental results of Ge-on-Si single-photon avalanche diodes based on a novel, to our knowledge, double mesa structure. Using this structure, the electric field at the mesa edges is suppressed compared to a traditional single mesa, leading to significant performance improvements. The dark current in linear mode shows a smaller increase for larger reverse voltages, resulting in a reduction by more than 260 times at low temperatures. Operated in the Geiger-mode at 110 K, the dark count rate in the double mesa is 100 times smaller. The devices achieve a dark count rate of 953 kHz, a single-photon detection efficiency of 7.3\%, and a record-low jitter of 81 ps at an excess bias of 17.6\% and a temperature of 110 K.
@article{wanitzek2024geonsi,
abstract = {We present experimental results of Ge-on-Si single-photon avalanche diodes based on a novel, to our knowledge, double mesa structure. Using this structure, the electric field at the mesa edges is suppressed compared to a traditional single mesa, leading to significant performance improvements. The dark current in linear mode shows a smaller increase for larger reverse voltages, resulting in a reduction by more than 260 times at low temperatures. Operated in the Geiger-mode at 110 K, the dark count rate in the double mesa is 100 times smaller. The devices achieve a dark count rate of 953 kHz, a single-photon detection efficiency of 7.3\%, and a record-low jitter of 81 ps at an excess bias of 17.6\% and a temperature of 110 K.},
added-at = {2025-02-19T11:29:40.000+0100},
author = {Wanitzek, Maurice and Schulze, Jörg and Oehme, Michael},
biburl = {https://puma.ub.uni-stuttgart.de/bibtex/2da98728dfd9c6039b31ce795cd16df47/ihtpublikation},
doi = {10.1364/OL.534436},
interhash = {9dd7ed28ba9f81215e83819846bd8858},
intrahash = {da98728dfd9c6039b31ce795cd16df47},
journal = {Opt. Lett.},
keywords = {Absorption Chemical Germanium; Quantum Scanning Single-photon avalanche coefficient; deposition; diodes distribution; electron iht; journal key microscopy; vapor;},
month = nov,
number = 22,
pages = {6345--6348},
publisher = {Optica Publishing Group},
timestamp = {2025-02-19T11:29:40.000+0100},
title = {Ge-on-Si single-photon avalanche diode using a double mesa structure},
url = {https://opg.optica.org/ol/abstract.cfm?URI=ol-49-22-6345},
volume = 49,
year = 2024
}
