%0 Conference Paper %1 8094530 %A Djekic, D. %A Fantner, G. %A Behrends, J. %A Lips, K. %A Ortmanns, M. %A Anders, J. %B ESSCIRC 2017 - 43rd IEEE European Solid State Circuits Conference %D 2017 %K MEPR TIA %P 79-82 %R 10.1109/ESSCIRC.2017.8094530 %T A transimpedance amplifier using a widely tunable PVT-independent pseudo-resistor for high-performance current sensing applications %U https://ieeexplore.ieee.org/document/8094530/ %X In this paper, we present a pseudo-resistor-based transimpedance amplifier (TIA) whose transimpedance value is PVT-independent and continuously tuneable over a wide range. The nonlinearity of the pseudo-resistors is mitigated by connecting a large number of elements in series and the effect of process variations on the pseudo-resistor is canceled by a biasing network based on a pseudo current mirror. The design is also first order temperature compensated exploiting the PTAT behavior of the proposed pseudo-resistor and using a PTAT current reference for its biasing. The proposed architecture is verified using a prototype manufactured in a 0.18 μm CMOS SOI technology. In this prototype, the transimpedance can be adjusted between approximately 1MΩ and 1 GΩ. The achievable bandwidth varies inversely proportional with the transimpedance value from around 7 kHz for a value of 1 GΩ up to an opamp-limited maximum of 2 MHz. In the white region, the input referred noise is equal to that of a TIA using an equivalent ohmic resistor. A minimum value of 5 fA/√Hz is achieved for a transimpedance of 1 GΩ. Over a temperature range from -40 °C to 125 °C, the transimpedance varies less than 10% for 1MΩ. The TIA occupies a chip area of 0.07 mm2. At room temperature, the power consumption is 9.5 mW from a single 1.8 V supply of which the pseudo-resistor consumes 0.2 mW.

@inproceedings{8094530, abstract = {In this paper, we present a pseudo-resistor-based transimpedance amplifier (TIA) whose transimpedance value is PVT-independent and continuously tuneable over a wide range. The nonlinearity of the pseudo-resistors is mitigated by connecting a large number of elements in series and the effect of process variations on the pseudo-resistor is canceled by a biasing network based on a pseudo current mirror. The design is also first order temperature compensated exploiting the PTAT behavior of the proposed pseudo-resistor and using a PTAT current reference for its biasing. The proposed architecture is verified using a prototype manufactured in a 0.18 μm CMOS SOI technology. In this prototype, the transimpedance can be adjusted between approximately 1MΩ and 1 GΩ. The achievable bandwidth varies inversely proportional with the transimpedance value from around 7 kHz for a value of 1 GΩ up to an opamp-limited maximum of 2 MHz. In the white region, the input referred noise is equal to that of a TIA using an equivalent ohmic resistor. A minimum value of 5 fA/√Hz is achieved for a transimpedance of 1 GΩ. Over a temperature range from -40 °C to 125 °C, the transimpedance varies less than 10% for 1MΩ. The TIA occupies a chip area of 0.07 mm2. At room temperature, the power consumption is 9.5 mW from a single 1.8 V supply of which the pseudo-resistor consumes 0.2 mW.}, added-at = {2020-10-11T10:17:25.000+0200}, author = {{Djekic}, D. and {Fantner}, G. and {Behrends}, J. and {Lips}, K. and {Ortmanns}, M. and {Anders}, J.}, biburl = {https://puma.ub.uni-stuttgart.de/bibtex/2d23938402bbdc7a84dc10c2b0956e7d5/jens.anders}, booktitle = {ESSCIRC 2017 - 43rd IEEE European Solid State Circuits Conference}, doi = {10.1109/ESSCIRC.2017.8094530}, interhash = {095b6949f3546ee8e0bd04b6a2783722}, intrahash = {d23938402bbdc7a84dc10c2b0956e7d5}, keywords = {MEPR TIA}, month = {Sep.}, pages = {79-82}, timestamp = {2020-10-12T13:44:20.000+0200}, title = {A transimpedance amplifier using a widely tunable PVT-independent pseudo-resistor for high-performance current sensing applications}, url = {https://ieeexplore.ieee.org/document/8094530/}, year = 2017 }