%0 Journal Article %1 choudhary2022steep %A Choudhary, Sumit %A Schwarz, Daniel %A Funk, Hannes S. %A Weißhaupt, David %A Khosla, Robin %A Sharma, Satinder K. %A Schulze, Jörg %D 2022 %I IEEE %J IEEE transactions on electron devices %K ubs_10005 ubs_20007 ubs_30069 ubs_40356 unibibliografie wos %N 5 %P 2725-2731 %R 10.1109/TED.2022.3161857 %T A Steep Slope MBE-Grown Thin p-Ge Channel FETs on Bulk Ge-on-Si Using HZO Internal Voltage Amplification %V 69

@article{choudhary2022steep, added-at = {2023-02-01T15:46:01.000+0100}, affiliation = {Sharma, SK (Corresponding Author), IIT Mandi, Sch Comp & Elect Engn, Mandi 175005, Himachal Prades, India. Choudhary, Sumit; Sharma, Satinder K., IIT Mandi, Sch Comp & Elect Engn, Mandi 175005, Himachal Prades, India. Schwarz, Daniel; Funk, Hannes S.; Weisshaupt, D.; Khosla, Robin; Schulze, Joerg, Univ Stuttgart, Inst Semicond Engn, D-70569 Stuttgart, Germany.}, author = {Choudhary, Sumit and Schwarz, Daniel and Funk, Hannes S. and Weißhaupt, David and Khosla, Robin and Sharma, Satinder K. and Schulze, Jörg}, biburl = {https://puma.ub.uni-stuttgart.de/bibtex/2c2c9019a57a82fd39f71fe3b8376a225/unibiblio}, doi = {10.1109/TED.2022.3161857}, interhash = {0ab4f9a8a1e12caf051c9ba4c4e1fb78}, intrahash = {c2c9019a57a82fd39f71fe3b8376a225}, issn = {{0018-9383} and {1557-9646}}, journal = {IEEE transactions on electron devices}, keywords = {ubs_10005 ubs_20007 ubs_30069 ubs_40356 unibibliografie wos}, language = {eng}, number = 5, orcid-numbers = {Funk, Hannes S./0000-0001-8485-2400 Schwarz, Daniel/0000-0003-2702-4697 Choudhary, Sumit/0000-0002-3127-4691 Khosla, Robin/0000-0002-5879-2106}, pages = {2725-2731}, publisher = {IEEE}, research-areas = {Engineering; Physics}, timestamp = {2023-02-01T14:46:01.000+0100}, title = {A Steep Slope MBE-Grown Thin p-Ge Channel FETs on Bulk Ge-on-Si Using HZO Internal Voltage Amplification}, unique-id = {WOS:000779824000001}, volume = 69, year = 2022 }