Abstract

Several emission features mark semiconductor quantum dots as promisingnon-classical light sources for prospective quantum implementations. Forlong-distance transmission and Si-based on-chip processing, the possibility tomatch the telecom C-band is decisive, while source brightness and highsingle-photon purity are key features in virtually any quantumimplementation. An InAs/InGaAs/GaAs quantum dot emitting in the telecomC-band coupled to a circular Bragg grating is presented here. This cavitystructure stands out due to its high broadband collection efficiency and highattainable Purcell factors. Here, simultaneously high brightness with afiber-coupled single-photon count rate of 13.9 MHz for an excitationrepetition rate of 228 MHz (first-lens single-photon collection efficiency≈17%for NA=0.6), while maintaining a low multi-photon contribution ofg(2)(0)=0.0052 is demonstrated. Moreover, the compatibility withtemperatures of up to 40 K attainable with compact cryo coolers, furtherunderlines the suitability for out-of-the-lab implementations

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