%0 Journal Article %1 oliveira2015fabrication %A Oliveira, F %A Fischer, I. A. %A Benedetti, A %A Zaumseil, P %A Cerqueira, M. F. %A Vasilevskiy, M. I. %A Stefanov, S %A Chiussi, S %A Schulze, J %B Applied Physics Letters %D 2015 %I American Institute of Physics %J APPLIED PHYSICS LETTERS %K gesn iht j.schulze.iht journal %N 26 %P 262102-- %R 10.1063/1.4938746 %T Fabrication of GeSn-multiple quantum wells by overgrowth of Sn on Ge by using molecular beam epitaxy %U https://doi.org/10.1063/1.4938746 %V 107 %X We report on the fabrication and structural characterization of epitaxially grown ultra-thin layers of Sn on Ge virtual substrates (Si buffer layer overgrown by a 50 nm thick Ge epilayer followed by an annealing step). Samples with 1 to 5 monolayers of Sn on Ge virtual substrates were grown using solid source molecular beam epitaxy and characterized by atomic force microscopy. We determined the critical thickness at which the transition from two-dimensional to three-dimensional growth occurs. This transition is due to the large lattice mismatch between Ge and Sn (≈14.7%). By depositing Ge on top of Sn layers, which have thicknesses at or just below the critical thickness, we were able to fabricate ultra-narrow GeSn multi-quantum-well structures that are fully embedded in Ge. We report results on samples with one and ten GeSn wells separated by 5 and 10 nm thick Ge spacer layers that were characterized by high resolution transmission electron microscopy and X-ray diffraction. We discuss the structure and m...

@article{oliveira2015fabrication, abstract = {We report on the fabrication and structural characterization of epitaxially grown ultra-thin layers of Sn on Ge virtual substrates (Si buffer layer overgrown by a 50 nm thick Ge epilayer followed by an annealing step). Samples with 1 to 5 monolayers of Sn on Ge virtual substrates were grown using solid source molecular beam epitaxy and characterized by atomic force microscopy. We determined the critical thickness at which the transition from two-dimensional to three-dimensional growth occurs. This transition is due to the large lattice mismatch between Ge and Sn (≈14.7%). By depositing Ge on top of Sn layers, which have thicknesses at or just below the critical thickness, we were able to fabricate ultra-narrow GeSn multi-quantum-well structures that are fully embedded in Ge. We report results on samples with one and ten GeSn wells separated by 5 and 10 nm thick Ge spacer layers that were characterized by high resolution transmission electron microscopy and X-ray diffraction. We discuss the structure and m...}, added-at = {2018-11-16T10:59:42.000+0100}, author = {Oliveira, F and Fischer, I. A. and Benedetti, A and Zaumseil, P and Cerqueira, M. F. and Vasilevskiy, M. I. and Stefanov, S and Chiussi, S and Schulze, J}, biburl = {https://puma.ub.uni-stuttgart.de/bibtex/28f700b01acc9bd80e526adcf670c50f5/ihtpublikation}, booktitle = {Applied Physics Letters}, comment = {doi: 10.1063/1.4938746}, doi = {10.1063/1.4938746}, interhash = {563022999b22e753b565be229d5ea4eb}, intrahash = {8f700b01acc9bd80e526adcf670c50f5}, issn = {00036951}, journal = {APPLIED PHYSICS LETTERS}, keywords = {gesn iht j.schulze.iht journal}, month = dec, number = 26, pages = {262102--}, publisher = {American Institute of Physics}, timestamp = {2018-11-16T10:00:13.000+0100}, title = {Fabrication of GeSn-multiple quantum wells by overgrowth of Sn on Ge by using molecular beam epitaxy}, url = {https://doi.org/10.1063/1.4938746}, volume = 107, year = 2015 }