Microsystems and interconnect devices based on ceramic substrate materials are used in many high temperature and power applications due to their superior thermal properties. With the current state-of-the-art pro-cesses, such as direct-bonded copper or high/low temperature co-fired ceramics, only 2D or multilayer struc-tures can be realized. In this paper, we present a fully digital, selective and additive process chain based on direct laser-induced activation and subsequent autocatalytic metallization of injection molded Al2O3-based substrates to produce 3D-ceramic interconnect devices. In order to laser-activate the Al2O3, it has either to be sintered in H2 atmosphere or doped with Cr2O3. The resulting selective metallization shows an adhesive strength of up to 50 N/mm² and can be connected with common interconnection technologies, such as reflow soldering, wire bonding etc. Thus, the developed process chain offers new possibilities in ceramic circuit carrier design and the integration into complex microsystems.
%0 Generic
%1 schilling20223dceramic
%A Schilling, Alexander
%A Ninz, Philipp
%A Weser, Sascha
%A Knoeller, Andrea
%A Guenther, Thomas
%A Eberhardt, Wolfgang
%A Kern, frank
%A Zimmermann, André
%D 2022
%K a.schilling from:holgerruehl guenther ifm_conf zimmermann
%T 3D-Ceramic Interconnect Devices Produced via Direct Laser-induced Metallization of Modified Al2O3
%X Microsystems and interconnect devices based on ceramic substrate materials are used in many high temperature and power applications due to their superior thermal properties. With the current state-of-the-art pro-cesses, such as direct-bonded copper or high/low temperature co-fired ceramics, only 2D or multilayer struc-tures can be realized. In this paper, we present a fully digital, selective and additive process chain based on direct laser-induced activation and subsequent autocatalytic metallization of injection molded Al2O3-based substrates to produce 3D-ceramic interconnect devices. In order to laser-activate the Al2O3, it has either to be sintered in H2 atmosphere or doped with Cr2O3. The resulting selective metallization shows an adhesive strength of up to 50 N/mm² and can be connected with common interconnection technologies, such as reflow soldering, wire bonding etc. Thus, the developed process chain offers new possibilities in ceramic circuit carrier design and the integration into complex microsystems.
@conference{schilling20223dceramic,
abstract = {Microsystems and interconnect devices based on ceramic substrate materials are used in many high temperature and power applications due to their superior thermal properties. With the current state-of-the-art pro-cesses, such as direct-bonded copper or high/low temperature co-fired ceramics, only 2D or multilayer struc-tures can be realized. In this paper, we present a fully digital, selective and additive process chain based on direct laser-induced activation and subsequent autocatalytic metallization of injection molded Al2O3-based substrates to produce 3D-ceramic interconnect devices. In order to laser-activate the Al2O3, it has either to be sintered in H2 atmosphere or doped with Cr2O3. The resulting selective metallization shows an adhesive strength of up to 50 N/mm² and can be connected with common interconnection technologies, such as reflow soldering, wire bonding etc. Thus, the developed process chain offers new possibilities in ceramic circuit carrier design and the integration into complex microsystems.},
added-at = {2023-06-14T15:20:34.000+0200},
author = {Schilling, Alexander and Ninz, Philipp and Weser, Sascha and Knoeller, Andrea and Guenther, Thomas and Eberhardt, Wolfgang and Kern, frank and Zimmermann, André},
biburl = {https://puma.ub.uni-stuttgart.de/bibtex/28e9fee5d5c5d5596f5677bd000f1998a/ifm},
eventtitle = {Ceramic Interconnect and Ceramic Microsystems Technologies (CICMT 2022)},
interhash = {9b8108891a8a3ee6d7039a4fa5316c3e},
intrahash = {8e9fee5d5c5d5596f5677bd000f1998a},
keywords = {a.schilling from:holgerruehl guenther ifm_conf zimmermann},
month = {07},
timestamp = {2023-07-05T06:58:23.000+0200},
title = {3D-Ceramic Interconnect Devices Produced via Direct Laser-induced Metallization of Modified Al2O3},
venue = {Wien},
year = 2022
}
