%0 Journal Article %1 kono2021hydrogenated %A Kono, Syuya %A Magari, Yusaku %A Mori, Marin %A Aman, S. G. Mehadi %A Frühauf, Norbert %A Furuta, Hiroshi %A Furuta, Mamoru %D 2021 %I IOP Publishing %J Japanese journal of applied physics %K ubs_10005 ubs_20007 ubs_30068 ubs_40337 unibibliografie wos %N SB %P SBBM05 %R 10.35848/1347-4065/abdf74 %T Hydrogenated In-Ga-Zn-O thin-film transistors with anodized and fluorinated Al2O3 gate insulator for flexible devices %V 60

@article{kono2021hydrogenated, added-at = {2022-03-17T12:58:47.000+0100}, affiliation = {Furuta, M (Corresponding Author), Kochi Univ Technol, Mat Sci & Engn Course, Kami, Kochi 7828502, Japan. Furuta, M (Corresponding Author), Kochi Univ Technol, Ctr Nanotechnol, Res Inst, Kami, Kochi 7828502, Japan. Kono, Syuya; Magari, Yusaku; Mori, Marin; Aman, S. G. Mehadi; Furuta, Mamoru, Kochi Univ Technol, Mat Sci & Engn Course, Kami, Kochi 7828502, Japan. Magari, Yusaku; Furuta, Hiroshi; Furuta, Mamoru, Kochi Univ Technol, Ctr Nanotechnol, Res Inst, Kami, Kochi 7828502, Japan. Fruehauf, Norbert, Univ Stuttgart, Inst Large Area Microelect, D-70569 Stuttgart, Germany. Furuta, Hiroshi, Kochi Univ Technol, Dept Elect & Photon Syst Engn, Kami, Kochi 7828502, Japan.}, author = {Kono, Syuya and Magari, Yusaku and Mori, Marin and Aman, S. G. Mehadi and Frühauf, Norbert and Furuta, Hiroshi and Furuta, Mamoru}, biburl = {https://puma.ub.uni-stuttgart.de/bibtex/28e77532031605c40e856d453c84a1e08/unibiblio}, doi = {10.35848/1347-4065/abdf74}, interhash = {ad2ca2237c645c8542372a8bd69d3ec7}, intrahash = {8e77532031605c40e856d453c84a1e08}, issn = {{0021-4922} and {1347-4065}}, journal = {Japanese journal of applied physics}, keywords = {ubs_10005 ubs_20007 ubs_30068 ubs_40337 unibibliografie wos}, language = {eng}, number = {SB}, orcid-numbers = {Furuta, Hiroshi/0000-0002-3129-0894}, pages = {SBBM05}, publisher = {IOP Publishing}, research-areas = {Physics}, researcherid-numbers = {Furuta, Hiroshi/A-8202-2010}, timestamp = {2024-08-08T16:55:45.000+0200}, title = {Hydrogenated In-Ga-Zn-O thin-film transistors with anodized and fluorinated Al2O3 gate insulator for flexible devices}, unique-id = {ISI:000616908700001}, volume = 60, year = 2021 }