%0 Conference Paper %1 seidel2022electroluminescence %A Seidel, Lukas %A Schäfer, Sören %A Oehme, Michael %A Buca, Dan %A Capellini, Giovanni %A Schulze, Jörg %A Schwarz, Daniel %B ESSCIRC 2022- IEEE 48th European Solid State Circuits Conference (ESSCIRC) %D 2022 %K iht professional_meetings %P 165-168 %R 10.1109/ESSCIRC55480.2022.9911458 %T Electroluminescence of SiGeSn/GeSn pin-Diodes Grown on a GeSn Buffer %X We present the growth, fabrication, and characterization of a GeSn pin-diode and a SiGeSn\GeSn pin-diode. The pin-diodes are grown by molecular beam epitaxy on a partially relaxed GeSn buffer grown by reduce-pressure chemical vapor deposition. The analysis of the crystal shows that the GeSn pin-diode is lattice-matched grown and the SiGeSn/GeSn pin-diode is pseudomorphic grown with respect to the buffer. Temperature-dependent direct current measurements reveal a threshold voltage shift from 0.3 V to 0.55 V and a series resistance that shows metallic behavior. Furthermore, by comparing the electroluminescence spectra at 13.4 K and 293 K we observe a 10 times higher signal for the GeSn pin-diode and a 3 times higher signal for the SiGeSn/GeSn pin-diode at cryogenic temperatures. The peak energies at an injection current density of 2.5 kA/cm2 are 575 meV and 610 meV, respectively.

@inproceedings{seidel2022electroluminescence, abstract = {We present the growth, fabrication, and characterization of a GeSn pin-diode and a SiGeSn\GeSn pin-diode. The pin-diodes are grown by molecular beam epitaxy on a partially relaxed GeSn buffer grown by reduce-pressure chemical vapor deposition. The analysis of the crystal shows that the GeSn pin-diode is lattice-matched grown and the SiGeSn/GeSn pin-diode is pseudomorphic grown with respect to the buffer. Temperature-dependent direct current measurements reveal a threshold voltage shift from 0.3 V to 0.55 V and a series resistance that shows metallic behavior. Furthermore, by comparing the electroluminescence spectra at 13.4 K and 293 K we observe a 10 times higher signal for the GeSn pin-diode and a 3 times higher signal for the SiGeSn/GeSn pin-diode at cryogenic temperatures. The peak energies at an injection current density of 2.5 kA/cm2 are 575 meV and 610 meV, respectively.}, added-at = {2023-01-12T10:58:29.000+0100}, author = {Seidel, Lukas and Schäfer, Sören and Oehme, Michael and Buca, Dan and Capellini, Giovanni and Schulze, Jörg and Schwarz, Daniel}, biburl = {https://puma.ub.uni-stuttgart.de/bibtex/284f68d1006aa920723f8ffc4f1aa1234/ihtpublikation}, booktitle = {ESSCIRC 2022- IEEE 48th European Solid State Circuits Conference (ESSCIRC)}, description = {Electroluminescence of SiGeSn/GeSn pin-Diodes Grown on a GeSn Buffer | IEEE Conference Publication | IEEE Xplore}, doi = {10.1109/ESSCIRC55480.2022.9911458}, interhash = {37a4da7da570613f59649f5416c14cc1}, intrahash = {84f68d1006aa920723f8ffc4f1aa1234}, keywords = {iht professional_meetings}, month = {Sep.}, pages = {165-168}, timestamp = {2023-01-12T10:03:12.000+0100}, title = {Electroluminescence of SiGeSn/GeSn pin-Diodes Grown on a GeSn Buffer}, year = 2022 }