We present a chip-integrated C-band transceiver for electron paramagnetic resonance (EPR) spectroscopy, implemented in a 130-nm SiGe BiCMOS technology. The presented EPR-on-a-chip transceiver displays an excellent minimum in-band noise Figure of 0.82 dB and a peak in-band output power $P_sat$ of 9.8 dBm. Furthermore, the presented chip provides a wide operating frequency range from 6 GHz to 8 GHz, which is crucial for detecting wideband EPR signals. The receiver and two-stage four-way combined power amplifier provide (conversion) gains of 32.8 dB and 13 dB, respectively. In proof-of-concept EPR measurements using an off-chip PCB coil as a detector and the standard EPR sample BDPA ($\alpha,\gamma$-bisdiphenylene-$\beta$-phenylallyl), the presented chip achieves a competitive spin sensitivity of $810^10$ spins/$\mathrmHz$ over an active volume of 31 n1.
%0 Conference Paper
%1 9816822
%A Lotfi, Hadi
%A Hassan, Mohamed Atef
%A Kern, Michal
%A Anders, Jens
%B 2022 17th Conference on Ph.D Research in Microelectronics and Electronics (PRIME)
%D 2022
%K from:michalkern myown
%P 157-160
%R 10.1109/PRIME55000.2022.9816822
%T A Compact C-band EPR-on-a-chip Transceiver in 130-nm SiGe BiCMOS
%X We present a chip-integrated C-band transceiver for electron paramagnetic resonance (EPR) spectroscopy, implemented in a 130-nm SiGe BiCMOS technology. The presented EPR-on-a-chip transceiver displays an excellent minimum in-band noise Figure of 0.82 dB and a peak in-band output power $P_sat$ of 9.8 dBm. Furthermore, the presented chip provides a wide operating frequency range from 6 GHz to 8 GHz, which is crucial for detecting wideband EPR signals. The receiver and two-stage four-way combined power amplifier provide (conversion) gains of 32.8 dB and 13 dB, respectively. In proof-of-concept EPR measurements using an off-chip PCB coil as a detector and the standard EPR sample BDPA ($\alpha,\gamma$-bisdiphenylene-$\beta$-phenylallyl), the presented chip achieves a competitive spin sensitivity of $810^10$ spins/$\mathrmHz$ over an active volume of 31 n1.
@inproceedings{9816822,
abstract = {We present a chip-integrated C-band transceiver for electron paramagnetic resonance (EPR) spectroscopy, implemented in a 130-nm SiGe BiCMOS technology. The presented EPR-on-a-chip transceiver displays an excellent minimum in-band noise Figure of 0.82 dB and a peak in-band output power $P_{\mathrm{sat}}$ of 9.8 dBm. Furthermore, the presented chip provides a wide operating frequency range from 6 GHz to 8 GHz, which is crucial for detecting wideband EPR signals. The receiver and two-stage four-way combined power amplifier provide (conversion) gains of 32.8 dB and 13 dB, respectively. In proof-of-concept EPR measurements using an off-chip PCB coil as a detector and the standard EPR sample BDPA ($\alpha,\gamma$-bisdiphenylene-$\beta$-phenylallyl), the presented chip achieves a competitive spin sensitivity of $8\times 10^{10}$ spins/$\sqrt{\mathrm{Hz}}$ over an active volume of 31 n1.},
added-at = {2023-07-28T14:08:28.000+0200},
author = {Lotfi, Hadi and Hassan, Mohamed Atef and Kern, Michal and Anders, Jens},
biburl = {https://puma.ub.uni-stuttgart.de/bibtex/2834dfbaf7c81966a3651ed4768ff0574/iis},
booktitle = {2022 17th Conference on Ph.D Research in Microelectronics and Electronics (PRIME)},
doi = {10.1109/PRIME55000.2022.9816822},
interhash = {38ced98188c56c260b377d4d1b36f004},
intrahash = {834dfbaf7c81966a3651ed4768ff0574},
keywords = {from:michalkern myown},
month = {June},
pages = {157-160},
timestamp = {2023-07-28T14:08:28.000+0200},
title = {A Compact C-band EPR-on-a-chip Transceiver in 130-nm SiGe BiCMOS},
year = 2022
}
