%0 Conference Paper %1 burghartz1990perimeter %A Burghartz, Joachim N. %A Sun, Jack Yuan-Chen %A Mader, Siegfried R. %A Stanis, Carol L. %A Ginsberg, Barry J. %B Digest of Technical Papers : 1990 Symposium on VLSI Technology %C Piscataway, New Jersey %D 1990 %I IEEE %K INES %P 55-56 %R 10.1109/VLSIT.1990.111005 %T Perimeter and plug effects in deep sub-micron polysilicon emitter bipolar transistors

@inproceedings{burghartz1990perimeter, added-at = {2019-04-12T12:25:31.000+0200}, address = {Piscataway, New Jersey}, author = {Burghartz, Joachim N. and Sun, Jack Yuan-Chen and Mader, Siegfried R. and Stanis, Carol L. and Ginsberg, Barry J.}, biburl = {https://puma.ub.uni-stuttgart.de/bibtex/27dc2dfbca6446bff6c2a107c92211767/kevin.konnerth}, booktitle = {Digest of Technical Papers : 1990 Symposium on VLSI Technology}, doi = {10.1109/VLSIT.1990.111005}, eventdate = {1990-06-04/1990-06-07}, eventtitle = {1990 Symposium on VLSI Technology}, interhash = {572b631fb52d19fa3b3b0515613ca7eb}, intrahash = {7dc2dfbca6446bff6c2a107c92211767}, keywords = {INES}, pages = {55-56}, publisher = {IEEE}, timestamp = {2019-04-12T10:25:31.000+0200}, title = {Perimeter and plug effects in deep sub-micron polysilicon emitter bipolar transistors}, venue = {Honolulu, USA}, year = 1990 }