The excellent performance of quantum magnetometers based on nitrogen-vacancy (NV) centers in diamond, including their high sensitivity, their wide dynamic range, and the possibility for a calibration-free operation, renders them a very promising alternative to classical magnetic field sensors. However, existing lab prototypes of NV center sensors still suffer from a large volume and non-scalable manufacturing technologies. To mitigate this problem, in this paper, we present a miniaturized and scalable microwave electronics platform for quantum magnetometry based on an S-band SiGe BiCMOS transmitter (TX) chip and a custom-designed resonator manufactured on a microwave printed circuit board. The fabricated TX chip can deliver a high saturated output power of 19dBm at a center frequency of 2.87GHz over a wide relative bandwidth of 38.3% of the center frequency to a 50Ω load while occupying a compact die area of 0.593mm2. To manipulate the spin state of NV centers efficiently, we use two of the presented TX chips to drive a newly proposed differential resonator, which provides microwave magnetic fields of B1=179μT over a large active area of 18.48×104 μm2. Continuous-wave and pulsed optically detected magnetic resonance (ODMR) measurements are used to verify the excellent performance of the proposed platform compared to the state-of-the-art. In these experiments, the presented platform produced Rabi frequencies up to 5.81MHz.
%0 Conference Paper
%1 10558502
%A Lotfi, Hadi
%A Kern, Michal
%A Unden, Thomas
%A Scharpf, Jochen
%A Schwartz, Ilai
%A Neumann, Philipp
%A Anders, Jens
%B 2024 IEEE International Symposium on Circuits and Systems (ISCAS)
%D 2024
%K myown
%P 1-5
%R 10.1109/ISCAS58744.2024.10558502
%T An S-band SiGe BiCMOS Transmitter for an NV Center Based Quantum Magnetometer
%X The excellent performance of quantum magnetometers based on nitrogen-vacancy (NV) centers in diamond, including their high sensitivity, their wide dynamic range, and the possibility for a calibration-free operation, renders them a very promising alternative to classical magnetic field sensors. However, existing lab prototypes of NV center sensors still suffer from a large volume and non-scalable manufacturing technologies. To mitigate this problem, in this paper, we present a miniaturized and scalable microwave electronics platform for quantum magnetometry based on an S-band SiGe BiCMOS transmitter (TX) chip and a custom-designed resonator manufactured on a microwave printed circuit board. The fabricated TX chip can deliver a high saturated output power of 19dBm at a center frequency of 2.87GHz over a wide relative bandwidth of 38.3% of the center frequency to a 50Ω load while occupying a compact die area of 0.593mm2. To manipulate the spin state of NV centers efficiently, we use two of the presented TX chips to drive a newly proposed differential resonator, which provides microwave magnetic fields of B1=179μT over a large active area of 18.48×104 μm2. Continuous-wave and pulsed optically detected magnetic resonance (ODMR) measurements are used to verify the excellent performance of the proposed platform compared to the state-of-the-art. In these experiments, the presented platform produced Rabi frequencies up to 5.81MHz.
@inproceedings{10558502,
abstract = {The excellent performance of quantum magnetometers based on nitrogen-vacancy (NV) centers in diamond, including their high sensitivity, their wide dynamic range, and the possibility for a calibration-free operation, renders them a very promising alternative to classical magnetic field sensors. However, existing lab prototypes of NV center sensors still suffer from a large volume and non-scalable manufacturing technologies. To mitigate this problem, in this paper, we present a miniaturized and scalable microwave electronics platform for quantum magnetometry based on an S-band SiGe BiCMOS transmitter (TX) chip and a custom-designed resonator manufactured on a microwave printed circuit board. The fabricated TX chip can deliver a high saturated output power of 19dBm at a center frequency of 2.87GHz over a wide relative bandwidth of 38.3% of the center frequency to a 50Ω load while occupying a compact die area of 0.593mm2. To manipulate the spin state of NV centers efficiently, we use two of the presented TX chips to drive a newly proposed differential resonator, which provides microwave magnetic fields of B1=179μT over a large active area of 18.48×104 μm2. Continuous-wave and pulsed optically detected magnetic resonance (ODMR) measurements are used to verify the excellent performance of the proposed platform compared to the state-of-the-art. In these experiments, the presented platform produced Rabi frequencies up to 5.81MHz.},
added-at = {2024-08-19T12:32:00.000+0200},
author = {Lotfi, Hadi and Kern, Michal and Unden, Thomas and Scharpf, Jochen and Schwartz, Ilai and Neumann, Philipp and Anders, Jens},
biburl = {https://puma.ub.uni-stuttgart.de/bibtex/2777e65e5cef792c0d1dd330a15e4a855/iis},
booktitle = {2024 IEEE International Symposium on Circuits and Systems (ISCAS)},
doi = {10.1109/ISCAS58744.2024.10558502},
interhash = {d8bc773bed4ecbffa1eadf93086530a0},
intrahash = {777e65e5cef792c0d1dd330a15e4a855},
issn = {2158-1525},
keywords = {myown},
month = may,
pages = {1-5},
timestamp = {2024-08-19T12:32:00.000+0200},
title = {An S-band SiGe BiCMOS Transmitter for an NV Center Based Quantum Magnetometer},
year = 2024
}