We report about the fabrication of GeSn/Ge pin diodes with Sn concentrations between 8 % and 14 %. The thickness of the GeSn layers in the intrinsic region was 100 nm. Starting from 12 % Sn, the GeSn begins to relax, which is associated with a significant increase in dark current of the associated pin bulk diodes. In contrast, the same amount of Sn incorporated in multi quantum-well structures grows pseudomorphically. In these diodes the dark current is reduced by almost two orders of magnitude for the highest Sn concentration of 14 % compared to the pin bulk diodes with the same Sn concentrations.
Description
GeSn/Ge Pin Diodes on Si with Sn Contents up to 14 % - IOPscience
%0 Journal Article
%1 noauthororeditor
%A Oehme, M.
%A Schulze, J.
%D 2019
%J The Electrochemical Society Transactions
%K iht j.schulze.iht journal
%N 1
%P 45-48
%R 10.1149/09301.0045ecst
%T GeSn/Ge Pin Diodes on Si with Sn Contents up to 14 %
%V 93
%X We report about the fabrication of GeSn/Ge pin diodes with Sn concentrations between 8 % and 14 %. The thickness of the GeSn layers in the intrinsic region was 100 nm. Starting from 12 % Sn, the GeSn begins to relax, which is associated with a significant increase in dark current of the associated pin bulk diodes. In contrast, the same amount of Sn incorporated in multi quantum-well structures grows pseudomorphically. In these diodes the dark current is reduced by almost two orders of magnitude for the highest Sn concentration of 14 % compared to the pin bulk diodes with the same Sn concentrations.
@article{noauthororeditor,
abstract = {We report about the fabrication of GeSn/Ge pin diodes with Sn concentrations between 8 % and 14 %. The thickness of the GeSn layers in the intrinsic region was 100 nm. Starting from 12 % Sn, the GeSn begins to relax, which is associated with a significant increase in dark current of the associated pin bulk diodes. In contrast, the same amount of Sn incorporated in multi quantum-well structures grows pseudomorphically. In these diodes the dark current is reduced by almost two orders of magnitude for the highest Sn concentration of 14 % compared to the pin bulk diodes with the same Sn concentrations.},
added-at = {2021-11-11T12:36:52.000+0100},
author = {Oehme, M. and Schulze, J.},
biburl = {https://puma.ub.uni-stuttgart.de/bibtex/26ef2b123ec119eb6ea800dc1ca9964ba/ihtpublikation},
description = {GeSn/Ge Pin Diodes on Si with Sn Contents up to 14 % - IOPscience},
doi = {10.1149/09301.0045ecst},
interhash = {4a80a76be386a9571e3780ecd60bf3e0},
intrahash = {6ef2b123ec119eb6ea800dc1ca9964ba},
journal = {The Electrochemical Society Transactions},
keywords = {iht j.schulze.iht journal},
number = 1,
pages = {45-48},
timestamp = {2021-11-11T11:36:52.000+0100},
title = {GeSn/Ge Pin Diodes on Si with Sn Contents up to 14 %},
volume = 93,
year = 2019
}
