Berger, Paul R., Ohio State Univ, Dept Elect & Comp Engn, Columbus, OH 43210 USA.
Hussain, Muhammad Mustafa, King Abdullah Univ Sci & Technol, Thuwal 23955, Saudi Arabia.
Iacopi, Francesca, Univ Technol Sydney, Fac Engn & IT, Sydney, NSW 2007, Australia.
Schulze, Jorg, Univ Stuttgart, Dept Elect Engn, Fac Informat, Elect Engn & Informat Technol, Stuttgart 70174, Germany.
Ye, Peide, Purdue Univ, W Lafayette, IN 47907 USA.
Rachmady, Willy, Intel Corp Hillsboro, Hillsboro, OR 97124 USA.
Wen, Huang-Chun, Texas Instruments Dallas, Dallas, TX 75243 USA.
Krishnan, Siddharth, Appl Mat Santa Clara, Santa Clara, CA 95054 USA.
%0 Journal Article
%1 berger2021foreword
%A Berger, Paul R.
%A Hussain, Muhammad Mustafa
%A Iacopi, Francesca
%A Schulze, Jörg
%A Ye, Peide
%A Rachmady, Willy
%A Wen, Huang-Chun
%A Krishnan, Siddharth
%D 2021
%I IEEE
%J IEEE transactions on electron devices
%K ubs_10005 ubs_20007 ubs_30069 unibibliografie wos
%N 7
%P 3138-3141
%R 10.1109/TED.2021.3083455
%T Foreword Special Issue on Low-Temperature Processing of Electronic Materials for Cutting Edge Devices
%V 68
@article{berger2021foreword,
added-at = {2022-04-14T15:25:35.000+0200},
affiliation = {Berger, Paul R., Ohio State Univ, Dept Elect & Comp Engn, Columbus, OH 43210 USA.
Hussain, Muhammad Mustafa, King Abdullah Univ Sci & Technol, Thuwal 23955, Saudi Arabia.
Iacopi, Francesca, Univ Technol Sydney, Fac Engn & IT, Sydney, NSW 2007, Australia.
Schulze, Jorg, Univ Stuttgart, Dept Elect Engn, Fac Informat, Elect Engn & Informat Technol, Stuttgart 70174, Germany.
Ye, Peide, Purdue Univ, W Lafayette, IN 47907 USA.
Rachmady, Willy, Intel Corp Hillsboro, Hillsboro, OR 97124 USA.
Wen, Huang-Chun, Texas Instruments Dallas, Dallas, TX 75243 USA.
Krishnan, Siddharth, Appl Mat Santa Clara, Santa Clara, CA 95054 USA.},
author = {Berger, Paul R. and Hussain, Muhammad Mustafa and Iacopi, Francesca and Schulze, Jörg and Ye, Peide and Rachmady, Willy and Wen, Huang-Chun and Krishnan, Siddharth},
biburl = {https://puma.ub.uni-stuttgart.de/bibtex/269bc08252126db819c4a17d3eabb870e/unibiblio},
doi = {10.1109/TED.2021.3083455},
interhash = {003a6683d2114a3c08ded6c0b882741d},
intrahash = {69bc08252126db819c4a17d3eabb870e},
issn = {{0018-9383} and {1557-9646}},
journal = {IEEE transactions on electron devices},
keywords = {ubs_10005 ubs_20007 ubs_30069 unibibliografie wos},
language = {eng},
number = 7,
pages = {3138-3141},
publisher = {IEEE},
research-areas = {Engineering; Physics},
timestamp = {2022-04-14T13:25:35.000+0200},
title = {Foreword Special Issue on Low-Temperature Processing of Electronic Materials for Cutting Edge Devices},
unique-id = {ISI:000665041900001},
volume = 68,
year = 2021
}
