Germanium tin (GeSn) shifts the photo-response of infrared (IR) light detectors from a typical cutoff wavelength of Ge detectors of 1550nm toward the mid infrared (MIR) 1. The determination of the optical absorption coefficient of GeSn is difficult because it requires both high grade GeSn material and appropriate measurement structure. A series of vertical pin photodetector with the absorber material GeSn of excellent quality were fabricated achieving quantitative extraction of the absorption coefficient from photo-response. In this paper the fabrication of vertical GeSn photodetectors, the measurement of the background doping level in the intrinsic region (i-region) and the determination of the absorption coefficient are presented and the influence of high doped contact layers and electro-absorption effects from the built-in electric field are discussed.
%0 Conference Paper
%1 6874643
%A Ye, K.
%A Zhang, W.
%A Oehme, M.
%A Schmid, M.
%A Gollhofer, M.
%A Kostecki, K.
%A Widmann, D.
%A Kasper, E.
%A Schulze, J.
%B 2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM)
%D 2014
%K iht j.schulze.iht journal
%P 137-138
%R 10.1109/ISTDM.2014.6874643
%T Extraction of GeSn absorption coefficients from photodetector response
%U https://ieeexplore.ieee.org/document/6874643/
%X Germanium tin (GeSn) shifts the photo-response of infrared (IR) light detectors from a typical cutoff wavelength of Ge detectors of 1550nm toward the mid infrared (MIR) 1. The determination of the optical absorption coefficient of GeSn is difficult because it requires both high grade GeSn material and appropriate measurement structure. A series of vertical pin photodetector with the absorber material GeSn of excellent quality were fabricated achieving quantitative extraction of the absorption coefficient from photo-response. In this paper the fabrication of vertical GeSn photodetectors, the measurement of the background doping level in the intrinsic region (i-region) and the determination of the absorption coefficient are presented and the influence of high doped contact layers and electro-absorption effects from the built-in electric field are discussed.
@inproceedings{6874643,
abstract = {Germanium tin (GeSn) shifts the photo-response of infrared (IR) light detectors from a typical cutoff wavelength of Ge detectors of 1550nm toward the mid infrared (MIR) [1]. The determination of the optical absorption coefficient of GeSn is difficult because it requires both high grade GeSn material and appropriate measurement structure. A series of vertical pin photodetector with the absorber material GeSn of excellent quality were fabricated achieving quantitative extraction of the absorption coefficient from photo-response. In this paper the fabrication of vertical GeSn photodetectors, the measurement of the background doping level in the intrinsic region (i-region) and the determination of the absorption coefficient are presented and the influence of high doped contact layers and electro-absorption effects from the built-in electric field are discussed.},
added-at = {2018-11-16T14:03:22.000+0100},
author = {Ye, K. and Zhang, W. and Oehme, M. and Schmid, M. and Gollhofer, M. and Kostecki, K. and Widmann, D. and Kasper, E. and Schulze, J.},
biburl = {https://puma.ub.uni-stuttgart.de/bibtex/23ecb7fbbddf7d343beb5fb9df287d0bf/ihtpublikation},
booktitle = {2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM)},
doi = {10.1109/ISTDM.2014.6874643},
interhash = {14ab1e8524dad49bb251738421af5353},
intrahash = {3ecb7fbbddf7d343beb5fb9df287d0bf},
keywords = {iht j.schulze.iht journal},
month = {June},
pages = {137-138},
timestamp = {2018-12-05T15:11:58.000+0100},
title = {Extraction of GeSn absorption coefficients from photodetector response},
url = {https://ieeexplore.ieee.org/document/6874643/},
year = 2014
}