The fabrication and properties of a light-emitting porous silicon device incorporating a p-n junction are presented. By means of a selective anodization of a sandwich of p+ on n-substrate, a nanoporous recombination region within the p-n junction is formed. The device shows rectifying characteristics with a considerable series resistance. When driven under forward bias, the diode emits bright light with linear dependence on the current. The measured external quantum efficiency is of the order of 10high-2 percent. The internal quantum efficiency should be at least one order of magnitude higher.
%0 Conference Paper
%1 lang1993porous
%A Lang, Walter
%A Steiner, P.
%A Kozlowski, F.
%A Sandmaier, Hermann
%B Light emission from silicon
%C Amsterdam
%D 1993
%I North-Holland
%K fis liste ubs_30119
%N 57, 1/6
%P 169-173
%R 10.1016/0022-2313(93)90127-9
%T Porous silicon light-emitting P-N junction
%X The fabrication and properties of a light-emitting porous silicon device incorporating a p-n junction are presented. By means of a selective anodization of a sandwich of p+ on n-substrate, a nanoporous recombination region within the p-n junction is formed. The device shows rectifying characteristics with a considerable series resistance. When driven under forward bias, the diode emits bright light with linear dependence on the current. The measured external quantum efficiency is of the order of 10high-2 percent. The internal quantum efficiency should be at least one order of magnitude higher.
@inproceedings{lang1993porous,
abstract = {The fabrication and properties of a light-emitting porous silicon device incorporating a p-n junction are presented. By means of a selective anodization of a sandwich of p+ on n-substrate, a nanoporous recombination region within the p-n junction is formed. The device shows rectifying characteristics with a considerable series resistance. When driven under forward bias, the diode emits bright light with linear dependence on the current. The measured external quantum efficiency is of the order of 10high-2 percent. The internal quantum efficiency should be at least one order of magnitude higher.},
added-at = {2023-08-21T15:14:23.000+0200},
address = {Amsterdam},
author = {Lang, Walter and Steiner, P. and Kozlowski, F. and Sandmaier, Hermann},
biburl = {https://puma.ub.uni-stuttgart.de/bibtex/2387d5bca41c08fc4b3a72c4511970837/unibiblio-4},
booktitle = {Light emission from silicon},
doi = {10.1016/0022-2313(93)90127-9},
eventdate = {1993-05-03/1993-05-07},
eventtitle = {Symposium "Light Emission from Porous Silicon" of the European Materials Research Society (EMRS) 1993 spring meeting},
interhash = {aface03ce3d3ad731425cc4f32dd7922},
intrahash = {387d5bca41c08fc4b3a72c4511970837},
keywords = {fis liste ubs_30119},
language = {eng},
number = {57, 1/6},
pages = {169-173},
publisher = {North-Holland},
series = {Journal of luminescence},
timestamp = {2023-09-01T10:41:40.000+0200},
title = {Porous silicon light-emitting P-N junction},
venue = {Strasbourg},
year = 1993
}
