For efficient heat removal, an intra-cavity diamond or silicon carbide heat spreader is indispensable in order to enable power scalability. Previously, a chip holder was presented that mechanically improved the thermal contact between gain element and heat spreader. This allowed to approximately double the maximum output power. However, recent thermal and laser measurements have shown that the heat transfer is still hampered by bottlenecks at the transitions between different parts of the gain chip holder, limiting the power scaling ability. A new chip-holder design as well as laser results with AlGaInP VECSELs emitting at 665 nm will be presented.
%0 Generic
%1 peschken2018characterization
%A Peschken, Alexander
%A Kahle, Hermann
%A Bek, Roman
%A Brauch, Uwe
%A Abdou Ahmed, Marwan
%A Jetter, Michael
%A Graf, Thomas
%A Michler, Peter
%D 2018
%E Chilla, Juan L.
%K myown from:dr.uwebrauch
%T Heat flow characterization in gain chip holders for high-efficiency
%X For efficient heat removal, an intra-cavity diamond or silicon carbide heat spreader is indispensable in order to enable power scalability. Previously, a chip holder was presented that mechanically improved the thermal contact between gain element and heat spreader. This allowed to approximately double the maximum output power. However, recent thermal and laser measurements have shown that the heat transfer is still hampered by bottlenecks at the transitions between different parts of the gain chip holder, limiting the power scaling ability. A new chip-holder design as well as laser results with AlGaInP VECSELs emitting at 665 nm will be presented.
@misc{peschken2018characterization,
abstract = {For efficient heat removal, an intra-cavity diamond or silicon carbide heat spreader is indispensable in order to enable power scalability. Previously, a chip holder was presented that mechanically improved the thermal contact between gain element and heat spreader. This allowed to approximately double the maximum output power. However, recent thermal and laser measurements have shown that the heat transfer is still hampered by bottlenecks at the transitions between different parts of the gain chip holder, limiting the power scaling ability. A new chip-holder design as well as laser results with AlGaInP VECSELs emitting at 665 nm will be presented.},
added-at = {2019-04-16T13:10:23.000+0200},
author = {Peschken, Alexander and Kahle, Hermann and Bek, Roman and Brauch, Uwe and Abdou Ahmed, Marwan and Jetter, Michael and Graf, Thomas and Michler, Peter},
biburl = {https://puma.ub.uni-stuttgart.de/bibtex/22ef3ba061aaed989d006dd6f9ecd4719/ifsw},
description = {Poster # 10515-32
in: Conference 10515
"Vertical External Cavity Surface Emitting Lasers (VECSELs) VIII"},
editor = {Chilla, Juan L.},
interhash = {e513b16238c4526ed8947806ebf999e6},
intrahash = {2ef3ba061aaed989d006dd6f9ecd4719},
keywords = {myown from:dr.uwebrauch},
language = {english},
month = jan,
timestamp = {2019-04-16T11:10:23.000+0200},
title = {Heat flow characterization in gain chip holders for high-efficiency},
year = 2018
}
