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Gas-Phase Structure of the Monomeric Alkylgallium(I) Compound Ga[C(SiMe3)3] and the Electrochemical Behavior of Ga4[C(SiMe3)3]4 and In4[C(SiMe3)3]4 with EPR Evidence for a Ga4R4 Radical Anion

, , , , , , and . Organometallics, 15 (4): 1146--1150 (1996)
DOI: 10.1021/OM950755S

Abstract

The gallium(I) compd. Ga4[C(SiMe3)3]4 (1) with a tetrahedral Ga4 core in the solid state gives on evapn. the monomeric Ga(I) alkyl Ga[C(SiMe3)3] with the unique structural situation of a Ga atom solely coordinated by one singly bonded carbon ligand. Its mol. structure was detd. now by gas-phase electron diffraction yielding a Ga-C bond length of 206.4(17) pm, similar to that found in the solid state for the tetramer and much longer than in compds. with gallium in the normal oxidn. state of +3. As shown by cyclic voltammetry, 1 and the analogous cluster In4[C(SiMe3)3]4 (2) could both be reversibly reduced at about -2 V vs Fc+/0. Whereas the reduced organoindium tetramer did not exhibit any detectable EPR signals between 4 and 300 K, the gallium analog showed an EPR spectrum compatible with the formulation [(RGa0.75)4].bul.-; i.e. the unpaired electron was delocalized over all four metal centers (a(69Ga) = 1.93 mT, a(71Ga) = 2.45 mT, 4 Ga). [on SciFinder(R)]

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