%0 Conference Paper %1 Walthes.2001b %A Walthes, Wolfgang %A Pascht, Andreas %A Berroth, Manfred %B International Semiconductor Device Research Symposium (ISDRS) %C Washington, DC, USA %D 2001 %I IEEE %K Conference int %P 605--608 %R 10.1109/ISDRS.2001.984592 %T Complete RF characterisation of CMOS power transistors for low noise and high power front end amplifier design %@ 0-7803-7432-0

@inproceedings{Walthes.2001b, added-at = {2020-09-17T16:05:06.000+0200}, address = {Washington, DC, USA}, author = {Walthes, Wolfgang and Pascht, Andreas and Berroth, Manfred}, biburl = {https://puma.ub.uni-stuttgart.de/bibtex/2036207e5a131e7324985ea8879813003/wolfgangvogel}, booktitle = {International Semiconductor Device Research Symposium (ISDRS)}, doi = {10.1109/ISDRS.2001.984592}, interhash = {b2886865f977f692be2f48fdc0786405}, intrahash = {036207e5a131e7324985ea8879813003}, isbn = {0-7803-7432-0}, keywords = {Conference int}, pages = {605--608}, publisher = {IEEE}, timestamp = {2020-09-17T14:06:51.000+0200}, title = {Complete RF characterisation of CMOS power transistors for low noise and high power front end amplifier design}, year = 2001 }