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%0 Journal Article
%1 journals/mr/BerbelFGLBB11
%A Berbel, N.
%A Fernández-García, Raúl
%A Gil, Ignacio
%A Li, B.
%A Boyer, Alexandre
%A Bendhia, Sonia
%D 2011
%J Microelectronics Reliability
%K dblp
%N 9-11
%P 1564-1567
%T Experimental verification of the usefulness of the nth power law MOSFET model under hot carrier wearout.
%U http://dblp.uni-trier.de/db/journals/mr/mr51.html#BerbelFGLBB11
%V 51
@article{journals/mr/BerbelFGLBB11,
added-at = {2012-01-13T00:00:00.000+0100},
author = {Berbel, N. and Fernández-García, Raúl and Gil, Ignacio and Li, B. and Boyer, Alexandre and Bendhia, Sonia},
biburl = {https://puma.ub.uni-stuttgart.de/bibtex/299f9fa2e0afd7b5ec2d73f5f7266ddbd/dblp},
ee = {http://dx.doi.org/10.1016/j.microrel.2011.06.041},
interhash = {f5662246a7d2ee02bb32e3681c0c0408},
intrahash = {99f9fa2e0afd7b5ec2d73f5f7266ddbd},
journal = {Microelectronics Reliability},
keywords = {dblp},
number = {9-11},
pages = {1564-1567},
timestamp = {2016-02-02T02:01:11.000+0100},
title = {Experimental verification of the usefulness of the nth power law MOSFET model under hot carrier wearout.},
url = {http://dblp.uni-trier.de/db/journals/mr/mr51.html#BerbelFGLBB11},
volume = 51,
year = 2011
}