Please log in to take part in the discussion (add own reviews or comments).
Cite this publication
More citation styles
- please select -
%0 Generic
%1 noauthororeditor
%A Jetter, M.
%A Mack, J.
%A Wächter, C.
%A and P. Michler,
%D 2011
%K ihfg
%T Poster: Quaternary AlInGaN layers as quantum wells and barriers for light emitting devices
@conference{noauthororeditor,
added-at = {2018-12-27T18:16:45.000+0100},
author = {Jetter, M. and Mack, J. and Wächter, C. and and P. Michler},
biburl = {https://puma.ub.uni-stuttgart.de/bibtex/206a95e6035b0fb284bf3348d794beb81/thomas_herzog},
description = {Poster: Quaternary AlInGaN layers as quantum wells and barriers for light emitting devices9th International Conference on Nitride Semiconductors (ICNS), Glasgow, UK, Juli 2011},
interhash = {df6c41270e3fcb71fb92916bcd801768},
intrahash = {06a95e6035b0fb284bf3348d794beb81},
keywords = {ihfg},
timestamp = {2018-12-27T17:16:45.000+0100},
title = {Poster: Quaternary AlInGaN layers as quantum wells and barriers for light emitting devices},
year = 2011
}