%0 Conference Paper %1 Kraus_IPRM2010-2 %A Kraus, S. %A Makon, R. E. %A Kallfass, I. %A Driad, R. %A Moyal, M. %A Ritter, D. %B 2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM) %D 2010 %K (circuits);gallium 11.5 17 20 GHz;InP-GaInAs;Indium bipolar circuits;Physics;Logic;Heterojunction comparator;master-slave comparator;voltage comparators compounds;DHBT compounds;heterojunction emitter-coupled latched logic mV;frequency mV;voltage phosphide;Clocks;Voltage;DH-HEMTs;Circuit simulation;Metastasis;Solid state transistors transistors;indium %P 1-4 %R 10.1109/ICIPRM.2010.5515962 %T Sensitivity of a 20-GS/s InP DHBT latched comparator %X We present simulations and measurements of the sensitivity of a master-slave emitter-coupled logic (ECL) latched comparator implemented in an InP/GaInAs DHBT technology. The circuit exhibited simulated and experimental sensitivities of 11.5 mV and 17 mV, respectively, at a clock rate of 20 GHz, with no preamplifier.

@inproceedings{Kraus_IPRM2010-2, abstract = {We present simulations and measurements of the sensitivity of a master-slave emitter-coupled logic (ECL) latched comparator implemented in an InP/GaInAs DHBT technology. The circuit exhibited simulated and experimental sensitivities of 11.5 mV and 17 mV, respectively, at a clock rate of 20 GHz, with no preamplifier.}, added-at = {2022-11-04T11:48:46.000+0100}, author = {{Kraus}, S. and {Makon}, R. E. and {Kallfass}, I. and {Driad}, R. and {Moyal}, M. and {Ritter}, D.}, bdsk-url-1 = {https://doi.org/10.1109/ICIPRM.2010.5515962}, biburl = {https://puma.ub.uni-stuttgart.de/bibtex/21d70ff71cd5c887dbd3d833b380e5548/ingmarkallfass}, booktitle = {2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM)}, date-added = {2020-11-27 15:26:18 +0100}, date-modified = {2020-11-27 15:26:27 +0100}, doi = {10.1109/ICIPRM.2010.5515962}, interhash = {d3c3b04dfe0e2a8d782bc2b155319292}, intrahash = {1d70ff71cd5c887dbd3d833b380e5548}, issn = {1092-8669}, keywords = {(circuits);gallium 11.5 17 20 GHz;InP-GaInAs;Indium bipolar circuits;Physics;Logic;Heterojunction comparator;master-slave comparator;voltage comparators compounds;DHBT compounds;heterojunction emitter-coupled latched logic mV;frequency mV;voltage phosphide;Clocks;Voltage;DH-HEMTs;Circuit simulation;Metastasis;Solid state transistors transistors;indium}, month = May, pages = {1-4}, timestamp = {2022-11-04T10:48:46.000+0100}, title = {Sensitivity of a 20-GS/s InP DHBT latched comparator}, year = 2010 }