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%0 Journal Article
%1 journals/mr/LeeBYPSCM05
%A Lee, Jin-Wook
%A Buh, Gyoung Ho
%A Yon, Guk-Hyon
%A su Park, Tai
%A Shin, Yu Gyun
%A Chung, U-In
%A Moon, Joo Tae
%D 2005
%J Microelectronics Reliability
%K dblp
%N 9-11
%P 1394-1397
%T Elimination of surface state induced edge transistors in high voltage NMOSFETs for flash memory devices.
%U http://dblp.uni-trier.de/db/journals/mr/mr45.html#LeeBYPSCM05
%V 45
@article{journals/mr/LeeBYPSCM05,
added-at = {2007-03-27T00:00:00.000+0200},
author = {Lee, Jin-Wook and Buh, Gyoung Ho and Yon, Guk-Hyon and su Park, Tai and Shin, Yu Gyun and Chung, U-In and Moon, Joo Tae},
biburl = {https://puma.ub.uni-stuttgart.de/bibtex/2e49101487432503ea30271a6b7f35d26/dblp},
ee = {http://dx.doi.org/10.1016/j.microrel.2005.07.035},
interhash = {cd35d321977baf203902dbda2265f2c1},
intrahash = {e49101487432503ea30271a6b7f35d26},
journal = {Microelectronics Reliability},
keywords = {dblp},
number = {9-11},
pages = {1394-1397},
timestamp = {2016-02-02T01:59:40.000+0100},
title = {Elimination of surface state induced edge transistors in high voltage NMOSFETs for flash memory devices.},
url = {http://dblp.uni-trier.de/db/journals/mr/mr45.html#LeeBYPSCM05},
volume = 45,
year = 2005
}
