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%0 Journal Article
%1 journals/tvlsi/MannZPGARPVHC19
%A Mann, Randy W.
%A Zhao, Meixiong
%A Parihar, Sanjay
%A Gao, Qun
%A Arya, Ankur
%A Radens, Carl
%A Pandey, Shesh Mani
%A Versaggi, Joseph
%A Higman, Jack M.
%A Carter, Rick
%D 2019
%J IEEE Trans. VLSI Syst.
%K dblp
%N 8
%P 1819-1827
%T An Extrinsic Device and Leakage Mechanism in Advanced Bulk FinFET SRAM.
%U http://dblp.uni-trier.de/db/journals/tvlsi/tvlsi27.html#MannZPGARPVHC19
%V 27
@article{journals/tvlsi/MannZPGARPVHC19,
added-at = {2019-08-08T00:00:00.000+0200},
author = {Mann, Randy W. and Zhao, Meixiong and Parihar, Sanjay and Gao, Qun and Arya, Ankur and Radens, Carl and Pandey, Shesh Mani and Versaggi, Joseph and Higman, Jack M. and Carter, Rick},
biburl = {https://puma.ub.uni-stuttgart.de/bibtex/275b1bfd8ae8df06172669cc2001205fc/dblp},
ee = {https://doi.org/10.1109/TVLSI.2019.2907594},
interhash = {c5487fcf7d5adbabaaa78bfca0ef5a1d},
intrahash = {75b1bfd8ae8df06172669cc2001205fc},
journal = {IEEE Trans. VLSI Syst.},
keywords = {dblp},
number = 8,
pages = {1819-1827},
timestamp = {2019-09-27T06:53:33.000+0200},
title = {An Extrinsic Device and Leakage Mechanism in Advanced Bulk FinFET SRAM.},
url = {http://dblp.uni-trier.de/db/journals/tvlsi/tvlsi27.html#MannZPGARPVHC19},
volume = 27,
year = 2019
}
