%0 Journal Article %1 journals/ibmrd/AntoniadisAC06 %A Antoniadis, Dimitri A. %A Aberg, Ingvar %A Chléirigh, Cáit Ní %A Nayfeh, Osama M. %A Khaki-Firooz, Ali %A Hoyt, Judy L. %D 2006 %J IBM Journal of Research and Development %K dblp %N 4-5 %P 363-376 %T Continuous MOSFET performance increase with device scaling: The role of strain and channel material innovations. %U http://dblp.uni-trier.de/db/journals/ibmrd/ibmrd50.html#AntoniadisAC06 %V 50

@article{journals/ibmrd/AntoniadisAC06, added-at = {2010-01-20T00:00:00.000+0100}, author = {Antoniadis, Dimitri A. and Aberg, Ingvar and Chléirigh, Cáit Ní and Nayfeh, Osama M. and Khaki-Firooz, Ali and Hoyt, Judy L.}, biburl = {https://puma.ub.uni-stuttgart.de/bibtex/2b8a73d1df9a6e4fa8c40c8f9a05ce310/dblp}, ee = {http://dx.doi.org/10.1147/rd.504.0363}, interhash = {b735dfcf7e79ee275ad556b24bfd7afd}, intrahash = {b8a73d1df9a6e4fa8c40c8f9a05ce310}, journal = {IBM Journal of Research and Development}, keywords = {dblp}, number = {4-5}, pages = {363-376}, timestamp = {2016-02-02T08:59:10.000+0100}, title = {Continuous MOSFET performance increase with device scaling: The role of strain and channel material innovations.}, url = {http://dblp.uni-trier.de/db/journals/ibmrd/ibmrd50.html#AntoniadisAC06}, volume = 50, year = 2006 }